Datasheet FFB2227A, FMB2227A (ON Semiconductor) - 3
| Manufacturer | ON Semiconductor |
| Description | NPN & PNP General Purpose Amplifier |
| Pages / Page | 6 / 3 — F FB2227. Electrical Characteristics. A / FMB2227A — NPN & PN. … |
| Revision | 2 |
| File Format / Size | PDF / 318 Kb |
| Document Language | English |
F FB2227. Electrical Characteristics. A / FMB2227A — NPN & PN. Symbol. Parameter. Test Conditions. Min. Typ. Max. Units
Model Line for this Datasheet
Text Version of Document
F FB2227 Electrical Characteristics
(3) Values are at TA = 25°C unless otherwise noted.
A / FMB2227A — NPN & PN Symbol Parameter Test Conditions Min. Typ. Max. Units
OFF CHARACTERISTICS Collector-Emitter Breakdown V(BR)CEO IC = 10 mA, IB = 0 30 V Voltage(4) Collector-Base Breakdown V(BR)CBO I Voltage C = 10 μA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 5 V ICBO Collector Cut-Off Current VCB = 50 V, IE = 0 30 nA IEBO Emitter Cut-Off Current VEB = 3.0 V, IC = 0 30 nA ON CHARACTERISTICS
P General-Purpose Amplifier
IC = 1.0 mA, VCE = 10 V 50 IC = 10 mA, VCE = 10 V 75 hFE DC Current Gain IC = 150 mA, VCE = 10 V(4) 100 IC = 300 mA, VCE = 10 V(4) 30 Collector-Emitter Saturation IC = 150 mA, IB = 15 mA 0.4 V VCE(sat) Voltage(4) IC = 300 mA, IB = 30 mA 1.4 V Base-Emitter Saturation VBE(sat) Voltage(4) IC = 150 mA, IB = 15 mA 1.3 V SMALL SIGNAL CHARACTERISTICS I f C = 50 mA, VCE = 20 V, T Current Gain - Bandwidth Product 250 MHz f = 100 MHz Cobo Output Capacitance VCB = 10 V, IE = 0, f = 100 kHz 4.0 pF Cibo Input Capacitance VEB = 2.0 V, IC = 0, f = 100 kHz 12 pF I NF Noise Figure C = 100 μA, VCE = 10 V, 2.0 dB RS = 1.0 kΩ, f = 1.0 kHz SWITCHING CHARACTERISTICS ton Turn-on Time 30 ns VCC = 30 V, IC = 150 mA, td Delay Time 8.0 ns IB1 = 15 mA tr Rise Time 20 ns toff Turn-off Time 80 ns VCC = 6.0 V, IC = 150 mA, ts Storage Time 60 ns IB1 = IB2 = 15 mA tf Fall Time 20 ns
Notes:
3. All voltages (V) and currents (A) are negative polarity for PNP transistors. 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. www.onsemi.com 3
(3) Values are at TA = 25°C unless otherwise noted.
A / FMB2227A — NPN & PN Symbol Parameter Test Conditions Min. Typ. Max. Units
OFF CHARACTERISTICS Collector-Emitter Breakdown V(BR)CEO IC = 10 mA, IB = 0 30 V Voltage(4) Collector-Base Breakdown V(BR)CBO I Voltage C = 10 μA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 5 V ICBO Collector Cut-Off Current VCB = 50 V, IE = 0 30 nA IEBO Emitter Cut-Off Current VEB = 3.0 V, IC = 0 30 nA ON CHARACTERISTICS
P General-Purpose Amplifier
IC = 1.0 mA, VCE = 10 V 50 IC = 10 mA, VCE = 10 V 75 hFE DC Current Gain IC = 150 mA, VCE = 10 V(4) 100 IC = 300 mA, VCE = 10 V(4) 30 Collector-Emitter Saturation IC = 150 mA, IB = 15 mA 0.4 V VCE(sat) Voltage(4) IC = 300 mA, IB = 30 mA 1.4 V Base-Emitter Saturation VBE(sat) Voltage(4) IC = 150 mA, IB = 15 mA 1.3 V SMALL SIGNAL CHARACTERISTICS I f C = 50 mA, VCE = 20 V, T Current Gain - Bandwidth Product 250 MHz f = 100 MHz Cobo Output Capacitance VCB = 10 V, IE = 0, f = 100 kHz 4.0 pF Cibo Input Capacitance VEB = 2.0 V, IC = 0, f = 100 kHz 12 pF I NF Noise Figure C = 100 μA, VCE = 10 V, 2.0 dB RS = 1.0 kΩ, f = 1.0 kHz SWITCHING CHARACTERISTICS ton Turn-on Time 30 ns VCC = 30 V, IC = 150 mA, td Delay Time 8.0 ns IB1 = 15 mA tr Rise Time 20 ns toff Turn-off Time 80 ns VCC = 6.0 V, IC = 150 mA, ts Storage Time 60 ns IB1 = IB2 = 15 mA tf Fall Time 20 ns
Notes:
3. All voltages (V) and currents (A) are negative polarity for PNP transistors. 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. www.onsemi.com 3
