Datasheet AO3400 (Alpha & Omega)
| Manufacturer | Alpha & Omega |
| Description | 30V N-Channel MOSFET |
| Pages / Page | 5 / 1 — AO3400. 30V N-Channel MOSFET. General Description. Product Summary. S T. … |
| File Format / Size | PDF / 484 Kb |
| Document Language | English |
AO3400. 30V N-Channel MOSFET. General Description. Product Summary. S T. O 2. T 3. T p. p Vi. V ew. B t. o tom. m Vi
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AO3400 30V N-Channel MOSFET General Description Product Summary
The AO3400 combines advanced trench MOSFET VDS 30V technology with a low resistance package to provide ID (at VGS=10V) 5.8A extremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V) < 28mΩ load switch or in PWM applications. RDS(ON) (at VGS = 4.5V) < 33mΩ RDS(ON) (at VGS = 2.5V) < 52mΩ
SO S T O 2 T 3 2
D
To T p o p Vi V ew e Bo B t o tom o m Vi V ew e
D D G G G S S S G
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Units
Dr D a r i a n- n S - ou o r u c r e e Vol o tag a e g VDS 30 3 V DS Gate-Source Voltage VGS ±12 V TA=25°C 5.8 Continuous Drain ID Current TA=70°C 4.9 A Pulsed Drain Current C IDM 30 TA=25°C 1.4 PD W Power Dissipation B TA=70°C 0.9 Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C
Thermal Characteristics Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 70 90 °C/W Rθ Maximum Junction-to-Ambient A D JA Steady-State 100 125 °C/W Maximum Junction-to-Lead Steady-State RθJL 63 80 °C/W Rev 8: Dec 2011
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The AO3400 combines advanced trench MOSFET VDS 30V technology with a low resistance package to provide ID (at VGS=10V) 5.8A extremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V) < 28mΩ load switch or in PWM applications. RDS(ON) (at VGS = 4.5V) < 33mΩ RDS(ON) (at VGS = 2.5V) < 52mΩ
SO S T O 2 T 3 2
D
To T p o p Vi V ew e Bo B t o tom o m Vi V ew e
D D G G G S S S G
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Units
Dr D a r i a n- n S - ou o r u c r e e Vol o tag a e g VDS 30 3 V DS Gate-Source Voltage VGS ±12 V TA=25°C 5.8 Continuous Drain ID Current TA=70°C 4.9 A Pulsed Drain Current C IDM 30 TA=25°C 1.4 PD W Power Dissipation B TA=70°C 0.9 Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C
Thermal Characteristics Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 70 90 °C/W Rθ Maximum Junction-to-Ambient A D JA Steady-State 100 125 °C/W Maximum Junction-to-Lead Steady-State RθJL 63 80 °C/W Rev 8: Dec 2011
www.aosmd.com
Page 1 of 5
