Datasheet FDV301N (Fairchild) - 2
| Manufacturer | Fairchild |
| Description | Digital FET, N-Channel |
| Pages / Page | 5 / 2 — Inverter Electrical Characteristics. Symbol. Parameter. Conditions. Min. … |
| File Format / Size | PDF / 243 Kb |
| Document Language | English |
Inverter Electrical Characteristics. Symbol. Parameter. Conditions. Min. Typ. Max. Units. Electrical Characteristics. OFF CHARACTERISTICS
Model Line for this Datasheet
Text Version of Document
Inverter Electrical Characteristics
(T = 25°C unless otherwise noted) A
Symbol Parameter Conditions Min Typ Max Units
I Zero Input Voltage Output Current V = 20 V, V = 0 V 1 µA O (off) CC I V Input Voltage V = 5 V, I = 10 µA 0.5 V I (off) CC O V V = 0.3 V, I = 0.005 A 1 V I (on) O O R Output to Ground Resistance V = 2.7 V, I = 0.2 A 4 5 Ω O (on) I O
Electrical Characteristics
(T = 25 OC unless otherwise noted ) A
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS
BV Drain-Source Breakdown Voltage V = 0 V, I = 250 µA 25 V DSS GS D ∆BV /∆T Breakdown Voltage Temp. Coefficient I = 250 µA, Referenced to 25 o C 25 mV / oC DSS J D I Zero Gate Voltage Drain Current V = 20 V, V = 0 V 1 µA DSS DS GS T = 55°C 10 µA J I Gate - Body Leakage Current V = 8 V, V = 0 V 100 nA GSS GS DS
ON CHARACTERISTICS
(Note) ∆V /∆T Gate Threshold Voltage Temp. Coefficient I = 250 µA, Referenced to 25 o C -2.1 mV / oC GS(th) J D V Gate Threshold Voltage V = V , I = 250 µA 0.70 0.85 1.06 V GS(th) DS GS D R Static Drain-Source On-Resistance V = 2.7 V, I = 0.2 A 3.8 5 Ω DS(ON) GS D T =125°C 6.3 9
J
V = 4.5 V, I = 0.4 A 3.1 4 GS D I On-State Drain Current V = 2.7 V, V = 5 V 0.2 A D(ON) GS DS g Forward Transconductance V = 5 V, I = 0.4 A 0.2 S FS DS D
DYNAMIC CHARACTERISTICS
C Input Capacitance V = 10 V, V = 0 V, 9.5 pF iss DS GS f = 1.0 MHz C Output Capacitance 6 pF oss C Reverse Transfer Capacitance 1.3 pF rss
SWITCHING CHARACTERISTICS
(Note) t Turn - On Delay Time V = 6 V, I = 0.5 A, 3.2 8 ns D(on) DD D V = 4.5 V, R = 50 Ω t Turn - On Rise Time GS GEN 6 15 ns r t Turn - Off Delay Time 3.5 8 ns D(off) t Turn - Off Fall Time 3.5 8 ns f Q Total Gate Charge V = 5 V, I = 0.2 A, 0.49 0.7 nC g DS D V = 4.5 V GS Q Gate-Source Charge 0.22 nC gs Q Gate-Drain Charge 0.07 nC gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I Maximum Continuous Drain-Source Diode Forward Current 0.29 A S V Drain-Source Diode Forward Voltage V = 0 V, I = 0.29 A (Note) 0.8 1.2 V SD GS S Note: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDV301N Rev.F1
(T = 25°C unless otherwise noted) A
Symbol Parameter Conditions Min Typ Max Units
I Zero Input Voltage Output Current V = 20 V, V = 0 V 1 µA O (off) CC I V Input Voltage V = 5 V, I = 10 µA 0.5 V I (off) CC O V V = 0.3 V, I = 0.005 A 1 V I (on) O O R Output to Ground Resistance V = 2.7 V, I = 0.2 A 4 5 Ω O (on) I O
Electrical Characteristics
(T = 25 OC unless otherwise noted ) A
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS
BV Drain-Source Breakdown Voltage V = 0 V, I = 250 µA 25 V DSS GS D ∆BV /∆T Breakdown Voltage Temp. Coefficient I = 250 µA, Referenced to 25 o C 25 mV / oC DSS J D I Zero Gate Voltage Drain Current V = 20 V, V = 0 V 1 µA DSS DS GS T = 55°C 10 µA J I Gate - Body Leakage Current V = 8 V, V = 0 V 100 nA GSS GS DS
ON CHARACTERISTICS
(Note) ∆V /∆T Gate Threshold Voltage Temp. Coefficient I = 250 µA, Referenced to 25 o C -2.1 mV / oC GS(th) J D V Gate Threshold Voltage V = V , I = 250 µA 0.70 0.85 1.06 V GS(th) DS GS D R Static Drain-Source On-Resistance V = 2.7 V, I = 0.2 A 3.8 5 Ω DS(ON) GS D T =125°C 6.3 9
J
V = 4.5 V, I = 0.4 A 3.1 4 GS D I On-State Drain Current V = 2.7 V, V = 5 V 0.2 A D(ON) GS DS g Forward Transconductance V = 5 V, I = 0.4 A 0.2 S FS DS D
DYNAMIC CHARACTERISTICS
C Input Capacitance V = 10 V, V = 0 V, 9.5 pF iss DS GS f = 1.0 MHz C Output Capacitance 6 pF oss C Reverse Transfer Capacitance 1.3 pF rss
SWITCHING CHARACTERISTICS
(Note) t Turn - On Delay Time V = 6 V, I = 0.5 A, 3.2 8 ns D(on) DD D V = 4.5 V, R = 50 Ω t Turn - On Rise Time GS GEN 6 15 ns r t Turn - Off Delay Time 3.5 8 ns D(off) t Turn - Off Fall Time 3.5 8 ns f Q Total Gate Charge V = 5 V, I = 0.2 A, 0.49 0.7 nC g DS D V = 4.5 V GS Q Gate-Source Charge 0.22 nC gs Q Gate-Drain Charge 0.07 nC gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I Maximum Continuous Drain-Source Diode Forward Current 0.29 A S V Drain-Source Diode Forward Voltage V = 0 V, I = 0.29 A (Note) 0.8 1.2 V SD GS S Note: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDV301N Rev.F1
