Datasheet BUK455-60A, BUK455-60B (Philips) - 4

Philips Semiconductors Product Specification PowerMOS transistor BUK455-60A/B ID / A BUK455-50A VGS(TO) / V 80 max. 4 70 Tj / C = 25 60 typ. 150 3 50 min. 40 2 30 20 1 10 0 0 0 2 4 6 8 10 -60 -20 20 60 100 140 180 VGS / V Tj / C Fig.7. Typical transfer characteristics. Fig.10. Gate threshold voltage. I = f(V ) ; conditions: V = 25 V; parameter T V = f(T ); conditions: I = 1 mA; V = V D GS DS j GS(TO) j D DS GS gfs / S BUK455-50A ID / A SUB-THRESHOLD CONDUCTION 1E-01 15 1E-02 2 % typ 98 % 1E-03 10 1E-04 5 1E-05 0 1E-06 0 20 40 60 80 0 1 2 3 4 ID / A VGS / V Fig.8. Typical transconductance, T = 25 ˚C. Fig.11. Sub-threshold drain current. j g = f(I ); conditions: V = 25 V I = f(V ; conditions: T = 25 ˚C; V = V fs D DS D GS) j DS GS a Normalised RDS(ON) = f(Tj) C / pF BUKxy5-50 2.0 10000 1.5 Ciss 1000 Coss 1.0 Crss 100 0.5 0 10 -60 -20 20 60 100 140 180 0 20 40 Tj / C VDS / V Fig.9. Normalised drain-source on-state resistance. Fig.12. Typical capacitances, C , C , C . iss oss rss a = R /R = f(T ); I = 20 A; V = 10 V C = f(V ); conditions: V = 0 V; f = 1 MHz DS(ON) DS(ON)25 ˚C j D GS DS GS April 1993 4 Rev 1.100 Document Outline GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL LIMITING VALUES THERMAL RESISTANCES STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS AVALANCHE LIMITING VALUE MECHANICAL DATA DEFINITIONS LIFE SUPPORT APPLICATIONS