Datasheet IRF9130 (Intersil)
| Manufacturer | Intersil |
| Description | -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET |
| Pages / Page | 7 / 1 — IRF9130. Data Sheet. February 1999. File Number. 2220.3. -12A, -100V, … |
| File Format / Size | PDF / 67 Kb |
| Document Language | English |
IRF9130. Data Sheet. February 1999. File Number. 2220.3. -12A, -100V, 0.30 Ohm, P-Channel Power. Features. MOSFET. Symbol
Model Line for this Datasheet
Text Version of Document
IRF9130 Data Sheet February 1999 File Number 2220.3 -12A, -100V, 0.30 Ohm, P-Channel Power Features MOSFET
• -12A, -100V These are P-Channel enhancement mode silicon gate • rDS(ON) = 0.30Ω power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a • Single Pulse Avalanche Energy Rated specified level of energy in the breakdown avalanche mode • SOA is Power Dissipation Limited of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching • Nanosecond Switching Speeds convertors, motor drivers, relay drivers, and drivers for high • Linear Transfer Characteristics power bipolar switching transistors requiring high speed and • High Input Impedance low gate drive power. They can be operated directly from integrated circuits.
Symbol
Formerly developmental type TA17511.
D Ordering Information PART NUMBER PACKAGE BRAND G
IRF9130 TO-204AA IRF9130
S
NOTE: When ordering, use the entire part number.
Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1)
5-8 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
• -12A, -100V These are P-Channel enhancement mode silicon gate • rDS(ON) = 0.30Ω power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a • Single Pulse Avalanche Energy Rated specified level of energy in the breakdown avalanche mode • SOA is Power Dissipation Limited of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching • Nanosecond Switching Speeds convertors, motor drivers, relay drivers, and drivers for high • Linear Transfer Characteristics power bipolar switching transistors requiring high speed and • High Input Impedance low gate drive power. They can be operated directly from integrated circuits.
Symbol
Formerly developmental type TA17511.
D Ordering Information PART NUMBER PACKAGE BRAND G
IRF9130 TO-204AA IRF9130
S
NOTE: When ordering, use the entire part number.
Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1)
5-8 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
