Datasheet PN4250A (Central Semiconductor)
| Manufacturer | Central Semiconductor |
| Description | Silicon PNP transistor designed for low level, low noise amplifier applications |
| Pages / Page | 4 / 1 — PN4250A. w w w. c e n t r a l s e m i . c o m. SILICON. DESCRIPTION:. PNP … |
| File Format / Size | PDF / 641 Kb |
| Document Language | English |
PN4250A. w w w. c e n t r a l s e m i . c o m. SILICON. DESCRIPTION:. PNP TRANSISTOR. MARKING: FULL PART NUMBER. TO-92 CASE
Model Line for this Datasheet
Text Version of Document
PN4250A w w w. c e n t r a l s e m i . c o m SILICON DESCRIPTION: PNP TRANSISTOR
The CENTRAL SEMICONDUCTOR PN4250A is a silicon PNP transistor designed for low level, low noise amplifier applications.
MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS:
(TA=25°C)
SYMBOL UNITS
Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCES 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 500 mA Power Dissipation PD 625 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJC 83.3 °C/W Thermal Resistance ΘJA 200 °C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO VCB=50V 10 nA IEBO VEB=3.0V 20 nA BVCBO IC=10μA 60 V BVCES IC=10μA 60 V BVCEO IC=5.0mA 60 V BVEBO IE=10μA 5.0 V VCE(SAT) IC=10mA, IB=0.5mA 0.25 V hFE VCE=5.0V, IC=100μA 250 700 Cob VCB=5.0V, f=1.0MHz 6.0 pF hfe VCE=5.0V, IC=1.0mA, f=1.0kHz 250 800 hie VCE=5.0V, IC=1.0mA, f=1.0kHz 6.0 20 kΩ hoe VCE=5.0V, IC=1.0mA, f=1.0kHz 5.0 50 μS hre VCE=5.0V, IC=1.0mA, f=1.0kHz 10 x10-4 NF VCE=5.0V, IC=250μA, RS=1.0kΩ f=1.0kHz, BW=150Hz 2.0 dB NF VCE=5.0V, IC=20μA, RS=10kΩ f=1.0kHz, BW=150Hz 2.0 dB R0 (26-July 2013)
The CENTRAL SEMICONDUCTOR PN4250A is a silicon PNP transistor designed for low level, low noise amplifier applications.
MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS:
(TA=25°C)
SYMBOL UNITS
Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCES 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 500 mA Power Dissipation PD 625 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJC 83.3 °C/W Thermal Resistance ΘJA 200 °C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO VCB=50V 10 nA IEBO VEB=3.0V 20 nA BVCBO IC=10μA 60 V BVCES IC=10μA 60 V BVCEO IC=5.0mA 60 V BVEBO IE=10μA 5.0 V VCE(SAT) IC=10mA, IB=0.5mA 0.25 V hFE VCE=5.0V, IC=100μA 250 700 Cob VCB=5.0V, f=1.0MHz 6.0 pF hfe VCE=5.0V, IC=1.0mA, f=1.0kHz 250 800 hie VCE=5.0V, IC=1.0mA, f=1.0kHz 6.0 20 kΩ hoe VCE=5.0V, IC=1.0mA, f=1.0kHz 5.0 50 μS hre VCE=5.0V, IC=1.0mA, f=1.0kHz 10 x10-4 NF VCE=5.0V, IC=250μA, RS=1.0kΩ f=1.0kHz, BW=150Hz 2.0 dB NF VCE=5.0V, IC=20μA, RS=10kΩ f=1.0kHz, BW=150Hz 2.0 dB R0 (26-July 2013)
