Datasheet MPSH10 (ON Semiconductor) - 3

ManufacturerON Semiconductor
DescriptionVHF/UHF TransistorsNPN Silicon
Pages / Page4 / 3 — MPSH10. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. …
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File Format / SizePDF / 141 Kb
Document LanguageEnglish

MPSH10. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS

MPSH10 ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit OFF CHARACTERISTICS ON CHARACTERISTICS

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MPSH10 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage V(BR)CEO 25 − Vdc (IC = 1.0 mAdc, IB = 0) Collector−Base Breakdown Voltage V(BR)CBO 30 − Vdc (IC = 100 mAdc, IE = 0) Emitter−Base Breakdown Voltage V(BR)EBO 3.0 − Vdc (IE = 10 mAdc, IC = 0) Collector Cutoff Current ICBO − 100 nAdc (VCB = 25 Vdc, IE = 0) Emitter Cutoff Current IEBO − 100 nAdc (VEB = 2.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain hFE 60 − − (IC = 4.0 mAdc, VCE = 10 Vdc) Collector−Emitter Saturation Voltage VCE(sat) − 0.5 Vdc (IC = 4.0 mAdc, IB = 0.4 mAdc) Base −Emitter On Voltage VBE(on) − 0.95 Vdc (IC = 4.0 mAdc, VCE = 10 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product fT 650 − MHz (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Collector−Base Capacitance Ccb − 0.7 pF (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Common−Base Feedback Capacitance Crb 0.35 0.65 pF (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Collector Base Time Constant rb’Cc − 9.0 ps (IC = 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz)
ORDERING INFORMATION Device Package Shipping
† MPSH10 TO−92 5000 Units / Box MPSH10G TO−92 5000 Units / Box (Pb−Free) MPSH10RLRA TO−92 2000 / Tape & Reel MPSH10RLRAG TO−92 2000 / Tape & Reel (Pb−Free) MPSH10RLRP TO−92 2000 / Ammo Pack MPSH10RLRPG TO−92 2000 / Ammo Pack (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
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