Datasheet TLX9188 (Toshiba) - 2
| Manufacturer | Toshiba |
| Description | TOSHIBA Photocoupler IRLED & Photo-Transistor |
| Pages / Page | 8 / 2 — Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25°C) |
| File Format / Size | PDF / 613 Kb |
| Document Language | English |
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25°C)
Model Line for this Datasheet
Text Version of Document
TLX9188
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25°C)
Characteristic Symbol Rating Unit Forward current IF 30 mA Forward current derating (Ta ≥ 108 °C) ΔIF/°C -0.7 mA/°C Pulse forward current (Note 1) IFP 1 A D E Reverse voltage VR 5 V L Input Power Dissipation PD 50 mW Input Power Dissipation Derating (Ta ≥ 50°C) ΔPD/°C -0.5 mW/°C Junction temperature Tj 135 °C Collector-emitter voltage VCEO 200 V Emitter-collector voltage VECO 7 V r to Collector current I c C 50 mA te e Collector power dissipation P D C 150 mW Collector power dissipation derating (Ta ≥ 25°C) ΔPC/°C -1.37 mW/°C Junction temperature Tj 135 °C Operating temperature range Topr -40 to 125 °C Storage temperature range Tstg -55 to 150 °C Lead soldering temperature (10 s) Tsol 260 °C Total package power dissipation PT 200 mW Isolation voltage (AC, 60 s, R.H. ≤ 60 %) (Note 2) BVS 3750 Vrms Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width PW ≤ 100 μs, f = 100 Hz Note 2: This device is considered as a two terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together. © 2 021 2 2021-09-13 Toshiba Electronic Devices & Storage Corporation
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25°C)
Characteristic Symbol Rating Unit Forward current IF 30 mA Forward current derating (Ta ≥ 108 °C) ΔIF/°C -0.7 mA/°C Pulse forward current (Note 1) IFP 1 A D E Reverse voltage VR 5 V L Input Power Dissipation PD 50 mW Input Power Dissipation Derating (Ta ≥ 50°C) ΔPD/°C -0.5 mW/°C Junction temperature Tj 135 °C Collector-emitter voltage VCEO 200 V Emitter-collector voltage VECO 7 V r to Collector current I c C 50 mA te e Collector power dissipation P D C 150 mW Collector power dissipation derating (Ta ≥ 25°C) ΔPC/°C -1.37 mW/°C Junction temperature Tj 135 °C Operating temperature range Topr -40 to 125 °C Storage temperature range Tstg -55 to 150 °C Lead soldering temperature (10 s) Tsol 260 °C Total package power dissipation PT 200 mW Isolation voltage (AC, 60 s, R.H. ≤ 60 %) (Note 2) BVS 3750 Vrms Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width PW ≤ 100 μs, f = 100 Hz Note 2: This device is considered as a two terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are shorted together. © 2 021 2 2021-09-13 Toshiba Electronic Devices & Storage Corporation
