Datasheet CBRLD1 (Central Semiconductor)
| Manufacturer | Central Semiconductor |
| Description | SURFACE MOUNT LOW PROFILE SILICON BRIDGE RECTIFIER 1 AMP, 200 THRU 1000 VOLTS |
| Pages / Page | 5 / 1 — CBRLD1 SERIES. SURFACE MOUNT. w w w. c e n t r a l s e m i . c o m. LOW … |
| File Format / Size | PDF / 685 Kb |
| Document Language | English |
CBRLD1 SERIES. SURFACE MOUNT. w w w. c e n t r a l s e m i . c o m. LOW PROFILE. DESCRIPTION:. SILICON BRIDGE RECTIFIER
Model Line for this Datasheet
Text Version of Document
CBRLD1 SERIES SURFACE MOUNT w w w. c e n t r a l s e m i . c o m LOW PROFILE DESCRIPTION: SILICON BRIDGE RECTIFIER 1 AMP, 200 THRU 1000 VOLTS
The CENTRAL SEMICONDUCTOR CBRLD1 series is a full wave silicon bridge rectifier mounted in a low profile epoxy surface mount molded case, utilizing glass passivated chips.
MARKING: SEE MARKING CODE TABLE ON FOLLOWING PAGE LPDIP CASE •
Device is
Halogen Free
by design
APPLICATIONS: FEATURES: •
Solid State Lighting (SSL)
•
Low leakage current (10μA MAX @ VRRM)
•
Power supply input rectification
•
Low profile case (1.45mm MAX)
•
Steering diode array
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
CBRLD1 SYMBOL -02 -04 -06 -08 -10 UNITS
Peak Repetitive Reverse Voltage VRRM 200 400 600 800 1000 V DC Blocking Voltage VR 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 140 280 420 560 700 V Average Forward Current IO 1.0 A Peak Forward Surge Current (tp=8.3ms) IFSM 30 A Operating & Storage Junction Temperature TJ, Tstg -55 to +150 °C Thermal Resistance ΘJA 95 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR VR=VRRM 10 μA VF IF=1.0A 1.0 V CJ VR=4.0V, f=1.0MHz 10 pF R1 (18-March 2012)
The CENTRAL SEMICONDUCTOR CBRLD1 series is a full wave silicon bridge rectifier mounted in a low profile epoxy surface mount molded case, utilizing glass passivated chips.
MARKING: SEE MARKING CODE TABLE ON FOLLOWING PAGE LPDIP CASE •
Device is
Halogen Free
by design
APPLICATIONS: FEATURES: •
Solid State Lighting (SSL)
•
Low leakage current (10μA MAX @ VRRM)
•
Power supply input rectification
•
Low profile case (1.45mm MAX)
•
Steering diode array
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
CBRLD1 SYMBOL -02 -04 -06 -08 -10 UNITS
Peak Repetitive Reverse Voltage VRRM 200 400 600 800 1000 V DC Blocking Voltage VR 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 140 280 420 560 700 V Average Forward Current IO 1.0 A Peak Forward Surge Current (tp=8.3ms) IFSM 30 A Operating & Storage Junction Temperature TJ, Tstg -55 to +150 °C Thermal Resistance ΘJA 95 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR VR=VRRM 10 μA VF IF=1.0A 1.0 V CJ VR=4.0V, f=1.0MHz 10 pF R1 (18-March 2012)
