Datasheet CBR1-D020S (Central Semiconductor)
| Manufacturer | Central Semiconductor |
| Description | SURFACE MOUNT 1 AMP SILICON BRIDGE RECTIFIER |
| Pages / Page | 3 / 1 — CBR1-D020S SERIES. SURFACE MOUNT. www.centra lsemi.com. 1 AMP. … |
| File Format / Size | PDF / 487 Kb |
| Document Language | English |
CBR1-D020S SERIES. SURFACE MOUNT. www.centra lsemi.com. 1 AMP. DESCRIPTION:. SILICON BRIDGE RECTIFIER. MARKING: FULL PART NUMBER
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CBR1-D020S SERIES SURFACE MOUNT www.centra lsemi.com 1 AMP DESCRIPTION: SILICON BRIDGE RECTIFIER
The CENTRAL SEMICONDUCTOR CBR1-D020S series types are silicon full wave bridge rectifiers mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips. NOTE: Also available in Fast Recovery, please contact factory for details.
MARKING: FULL PART NUMBER SMDIP CASE MAXIMUM RATINGS: CBR1- CBR1- CBR1- CBR1- CBR1-
(TA=25°C unless otherwise noted)
SYMBOL D020S D040S D060S D080S D100S UNITS
Peak Repetitive Reverse Voltage VRRM 200 400 600 800 1000 V DC Blocking Voltage VR 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 140 280 420 560 700 V Average Forward Current (TA=50°C) IO 1.0 A Peak Forward Surge Current IFSM 50 A Rating for Fusing (t<8.35ms) I2t 10 A2s Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR VR=Rated VRRM 10 µA IR VR=Rated VRRM, TA=125°C 0.5 mA VF IF=1.0A 1.1 V CJ VR=4.0V, f=1.0MHz 25 pF R3 (4-January 2010)
The CENTRAL SEMICONDUCTOR CBR1-D020S series types are silicon full wave bridge rectifiers mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips. NOTE: Also available in Fast Recovery, please contact factory for details.
MARKING: FULL PART NUMBER SMDIP CASE MAXIMUM RATINGS: CBR1- CBR1- CBR1- CBR1- CBR1-
(TA=25°C unless otherwise noted)
SYMBOL D020S D040S D060S D080S D100S UNITS
Peak Repetitive Reverse Voltage VRRM 200 400 600 800 1000 V DC Blocking Voltage VR 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 140 280 420 560 700 V Average Forward Current (TA=50°C) IO 1.0 A Peak Forward Surge Current IFSM 50 A Rating for Fusing (t<8.35ms) I2t 10 A2s Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR VR=Rated VRRM 10 µA IR VR=Rated VRRM, TA=125°C 0.5 mA VF IF=1.0A 1.1 V CJ VR=4.0V, f=1.0MHz 25 pF R3 (4-January 2010)
