Datasheet CBR25-010P (Central Semiconductor)
| Manufacturer | Central Semiconductor |
| Description | SILICON BRIDGE RECTIFIERS 25 AMP, 100 THRU 1000 VOLT |
| Pages / Page | 6 / 1 — CBR25-010P SERIES. w w w. c e n t r a l s e m i . c o m. SILICON BRIDGE … |
| File Format / Size | PDF / 703 Kb |
| Document Language | English |
CBR25-010P SERIES. w w w. c e n t r a l s e m i . c o m. SILICON BRIDGE RECTIFIERS. DESCRIPTION:. 25 AMP, 100 THRU 1000 VOLT
Model Line for this Datasheet
Text Version of Document
CBR25-010P SERIES w w w. c e n t r a l s e m i . c o m SILICON BRIDGE RECTIFIERS DESCRIPTION: 25 AMP, 100 THRU 1000 VOLT
The CENTRAL SEMICONDUCTOR CBR25-010P series devices are silicon, single phase, full wave bridge rectifiers designed for general purpose applications. The molded epoxy case has a built-in metal baseplate for heat sink mounting. The device utilizes standard 0.25” FASTON terminals.
MARKING: FULL PART NUMBER CASE FP MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
CBR25 SYMBOL -010P -020P -040P -060P -080P -100P UNITS
Peak Repetitive Reverse Voltage VRRM 100 200 400 600 800 1000 V DC Blocking Voltage VR 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 70 140 280 420 560 700 V Average Forward Current (TC=60°C) IO 25 A Peak Forward Surge Current IFSM 350 A I2t Rating for Fusing (1ms<t<8.3ms) I2t 375 A2s RMS Isolation Voltage (case to lead) Viso 2500 Vac Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJC 1.9 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=Rated VRRM 10 μA IR VR=Rated VRRM, TA=125°C 500 μA VF IF=12.5A 1.2 V CJ VR=4.0V, f=1.0MHz 300 pF R3 (24-June 2013)
The CENTRAL SEMICONDUCTOR CBR25-010P series devices are silicon, single phase, full wave bridge rectifiers designed for general purpose applications. The molded epoxy case has a built-in metal baseplate for heat sink mounting. The device utilizes standard 0.25” FASTON terminals.
MARKING: FULL PART NUMBER CASE FP MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
CBR25 SYMBOL -010P -020P -040P -060P -080P -100P UNITS
Peak Repetitive Reverse Voltage VRRM 100 200 400 600 800 1000 V DC Blocking Voltage VR 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 70 140 280 420 560 700 V Average Forward Current (TC=60°C) IO 25 A Peak Forward Surge Current IFSM 350 A I2t Rating for Fusing (1ms<t<8.3ms) I2t 375 A2s RMS Isolation Voltage (case to lead) Viso 2500 Vac Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJC 1.9 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=Rated VRRM 10 μA IR VR=Rated VRRM, TA=125°C 500 μA VF IF=12.5A 1.2 V CJ VR=4.0V, f=1.0MHz 300 pF R3 (24-June 2013)
