Datasheet CBR35-060P (Central Semiconductor)
| Manufacturer | Central Semiconductor |
| Description | SILICON BRIDGE RECTIFIER 35 AMP, 600 VOLT |
| Pages / Page | 4 / 1 — CBR35-060P. PRELIMINAR. www.centra lsemi.com. SILICON BRIDGE RECTIFIER. … |
| File Format / Size | PDF / 527 Kb |
| Document Language | English |
CBR35-060P. PRELIMINAR. www.centra lsemi.com. SILICON BRIDGE RECTIFIER. 35 AMP, 600 VOLT. DESCRIPTION:. MARKING: FULL PART NUMBER
Text Version of Document
Y CBR35-060P PRELIMINAR www.centra lsemi.com SILICON BRIDGE RECTIFIER 35 AMP, 600 VOLT DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR35-060P is a silicon, single phase, full wave bridge rectifier designed for general purpose applications. The molded epoxy case has a built-in metal baseplate for heat sink mounting. The device utilizes standard 0.25” FASTON terminals.
MARKING: FULL PART NUMBER CASE FP MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 600 V DC Blocking Voltage VR 600 V RMS Reverse Voltage VR(RMS) 420 V Average Forward Current (TC=60°C) IO 35 A Peak Forward Surge Current IFSM 400 A I2t Rating for Fusing (1ms<t<8.3ms) I2t 660 A2s RMS Isolation Voltage (case to lead) Viso
Y
2500 Vac Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJC 1.4 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=600V 10 µA IR VR=600V, TA=125°C 500 µA VF IF=17.5A 1.2 V CJ VR=4.0V, f=1.0MHz 300 pF
PRELIMINAR
R0 (12-October 2016)
The CENTRAL SEMICONDUCTOR CBR35-060P is a silicon, single phase, full wave bridge rectifier designed for general purpose applications. The molded epoxy case has a built-in metal baseplate for heat sink mounting. The device utilizes standard 0.25” FASTON terminals.
MARKING: FULL PART NUMBER CASE FP MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 600 V DC Blocking Voltage VR 600 V RMS Reverse Voltage VR(RMS) 420 V Average Forward Current (TC=60°C) IO 35 A Peak Forward Surge Current IFSM 400 A I2t Rating for Fusing (1ms<t<8.3ms) I2t 660 A2s RMS Isolation Voltage (case to lead) Viso
Y
2500 Vac Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJC 1.4 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=600V 10 µA IR VR=600V, TA=125°C 500 µA VF IF=17.5A 1.2 V CJ VR=4.0V, f=1.0MHz 300 pF
PRELIMINAR
R0 (12-October 2016)
