Datasheet CBR4M-L010 (Central Semiconductor)
| Manufacturer | Central Semiconductor |
| Description | SILICON BRIDGE RECTIFIERS 4.0 AMP, 100 THRU 1000 VOLT |
| Pages / Page | 3 / 1 — CBR4M-L010 SERIES. w w w. c e n t r a l s e m i . c o m. SILICON BRIDGE … |
| File Format / Size | PDF / 555 Kb |
| Document Language | English |
CBR4M-L010 SERIES. w w w. c e n t r a l s e m i . c o m. SILICON BRIDGE RECTIFIERS. DESCRIPTION:. 4.0 AMP, 100 THRU 1000 VOLT
Model Line for this Datasheet
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CBR4M-L010 SERIES w w w. c e n t r a l s e m i . c o m SILICON BRIDGE RECTIFIERS DESCRIPTION: 4.0 AMP, 100 THRU 1000 VOLT
The CENTRAL SEMICONDUCTOR CBR4M-L010 series types are silicon, single phase, full wave bridge rectifiers designed for general purpose, high current applications.
MARKING: FULL PART NUMBER CASE DM MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
CBR4M SYMBOL -L010 -L020 -L040 -L060 -L080 -L100 UNITS
Peak Repetitive Reverse Voltage VRRM 100 200 400 600 800 1000 V DC Blocking Voltage VR 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 70 140 280 420 560 700 V Average Forward Current IO 4.0 A Average Forward Current (TC=100°C) IO 8.0 A Peak Forward Surge Current IFSM 200 A Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJC 3.5 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR VR=Rated VRRM 10 μA VF IF=6.28A 1.1 V R4 (11-October 2013)
The CENTRAL SEMICONDUCTOR CBR4M-L010 series types are silicon, single phase, full wave bridge rectifiers designed for general purpose, high current applications.
MARKING: FULL PART NUMBER CASE DM MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
CBR4M SYMBOL -L010 -L020 -L040 -L060 -L080 -L100 UNITS
Peak Repetitive Reverse Voltage VRRM 100 200 400 600 800 1000 V DC Blocking Voltage VR 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 70 140 280 420 560 700 V Average Forward Current IO 4.0 A Average Forward Current (TC=100°C) IO 8.0 A Peak Forward Surge Current IFSM 200 A Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJC 3.5 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR VR=Rated VRRM 10 μA VF IF=6.28A 1.1 V R4 (11-October 2013)
