Datasheet Si2369DS (Vishay) - 3
| Manufacturer | Vishay |
| Description | P-Channel 30 V (D-S) MOSFET |
| Pages / Page | 9 / 3 — Si2369DS. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer … |
| File Format / Size | PDF / 202 Kb |
| Document Language | English |
Si2369DS. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer Characteristics. On-Resistance vs. Drain Current. Capacitance
Model Line for this Datasheet
Text Version of Document
Si2369DS
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 2 50 V = 10 V thru 5 V GS 40 1.5 ) V = 4.5 V GS (A) (A 30 rent V = 4 V GS Cur Current 1 T = 25 °C ain C 20 Dr Drain - - I D I D 0.5 10 T = 125 °C C V = 3 V GS T = - 55 °C C 0 0 0 0.5 1 1.5 2 0 0.6 1.2 1.8 2.4 3 V - Drain-to-Source Voltage (V) D S V - Gate-to-Source Voltage (V) GS
Output Characteristics Transfer Characteristics
0.06 1800 ) 0.045 1350 V = 4.5 V GS (pF) C iss tance (Ω V = 6 V is GS s e 0.03 900 -R On - ) Capacitance n V = 10 V (o GS S C - DR 0.015 450 C oss C rss 0 0 0 10 20 30 40 50 0 6 12 18 24 30 I - Drain Current (A) D V - Drain-to-Source Voltage (V) DS
On-Resistance vs. Drain Current Capacitance
1.5 10 I = 5.4 A I = 5.4 A D D V = 8 V DS V = 10 V, 6 V GS ) 8 (V) lized a 1.3 rm tage V = 15 V DS (No V = 4.5 V 6 GS tance 1.1 ource Vol S is s e to- 4 -R V = 24 V ate- DS G On - - ) 0.9 n GS 2 (o V S DR 0 0.7 0 5 10 15 20 25 - 50 - 25 0 25 50 75 100 125 150 Q - Total Gate Charge (nC) g T - Junction Temperature (°C) J
Gate Charge On-Resistance vs. Junction Temperature
S13-1663-Rev. A, 29-Jul-13
3
Document Number: 62865 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 2 50 V = 10 V thru 5 V GS 40 1.5 ) V = 4.5 V GS (A) (A 30 rent V = 4 V GS Cur Current 1 T = 25 °C ain C 20 Dr Drain - - I D I D 0.5 10 T = 125 °C C V = 3 V GS T = - 55 °C C 0 0 0 0.5 1 1.5 2 0 0.6 1.2 1.8 2.4 3 V - Drain-to-Source Voltage (V) D S V - Gate-to-Source Voltage (V) GS
Output Characteristics Transfer Characteristics
0.06 1800 ) 0.045 1350 V = 4.5 V GS (pF) C iss tance (Ω V = 6 V is GS s e 0.03 900 -R On - ) Capacitance n V = 10 V (o GS S C - DR 0.015 450 C oss C rss 0 0 0 10 20 30 40 50 0 6 12 18 24 30 I - Drain Current (A) D V - Drain-to-Source Voltage (V) DS
On-Resistance vs. Drain Current Capacitance
1.5 10 I = 5.4 A I = 5.4 A D D V = 8 V DS V = 10 V, 6 V GS ) 8 (V) lized a 1.3 rm tage V = 15 V DS (No V = 4.5 V 6 GS tance 1.1 ource Vol S is s e to- 4 -R V = 24 V ate- DS G On - - ) 0.9 n GS 2 (o V S DR 0 0.7 0 5 10 15 20 25 - 50 - 25 0 25 50 75 100 125 150 Q - Total Gate Charge (nC) g T - Junction Temperature (°C) J
Gate Charge On-Resistance vs. Junction Temperature
S13-1663-Rev. A, 29-Jul-13
3
Document Number: 62865 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
