Datasheet ADG1438, ADG1439 (Analog Devices) - 3

ManufacturerAnalog Devices
DescriptionSerially Controlled, ±15 V/+12 V/±5 V, 8-Channel/ 4-Channel, iCMOS Multiplexers/Matrix Switches
Pages / Page20 / 3 — Data Sheet. ADG1438/ADG1439. SPECIFICATIONS ±15 V DUAL SUPPLY. Table 2. …
RevisionB
File Format / SizePDF / 540 Kb
Document LanguageEnglish

Data Sheet. ADG1438/ADG1439. SPECIFICATIONS ±15 V DUAL SUPPLY. Table 2. −40°C to. Parameter. +25°C. +85°C. +125°C. Unit

Data Sheet ADG1438/ADG1439 SPECIFICATIONS ±15 V DUAL SUPPLY Table 2 −40°C to Parameter +25°C +85°C +125°C Unit

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Data Sheet ADG1438/ADG1439 SPECIFICATIONS ±15 V DUAL SUPPLY
VDD = +15 V ± 10%, VSS = –15 V ± 10%, VL = 2.7 V to 5.5 V, GND = 0 V, unless otherwise noted.
Table 2. −40°C to −40°C to Parameter +25°C +85°C +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VSS to VDD V On Resistance (RON) 9.5 Ω typ VDD = +13.5 V, VSS = −13.5 V, VS = ±10 V, IS = −10 mA; see Figure 27. 11.5 14 16 Ω max On-Resistance Match Between 0.55 Ω typ VDD = +13.5 V, VSS = −13.5 V, VS = ±10 V, Channels (ΔRON) IS = −10 mA. 1 1.5 1.7 Ω max On-Resistance Flatness (RFLAT(ON)) 1.6 Ω typ VDD = +13.5 V, VSS = −13.5 V, VS = ±10 V, IS = −10 mA. 1.9 2.15 2.3 Ω max LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V. Source Off Leakage, IS (Off) ±0.05 nA typ VS = ±10 V, VD = ∓10 V; see Figure 28. ±0.15 ±1 ±2 nA max Drain Off Leakage, ID (Off) ±0.05 nA typ VS = ±10 V, VD = ∓10 V; see Figure 28. ADG1438 ±0.25 ±3 ±12 nA max ADG1439 ±0.25 ±1.5 ±6 nA max Channel On Leakage, ID, IS (On) ±0.1 nA typ VS = VD = ±10 V; see Figure 29. ±0.3 ±3 ±12 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current ±0.001 µA typ VIN = VGND or VL. ±0.1 µA max Digital Input Capacitance, CIN 4 pF typ LOGIC OUTPUTS (SDO) Output Low Voltage, V 1 OL 0.4 V max ISINK = 3 mA. 0.6 V max ISINK = 6 mA. High Impedance Leakage Current 0.001 µA typ ±1 µA max High Impedance Output 4 pF typ Capacitance1 DYNAMIC CHARACTERISTICS1 Break-Before-Make Time Delay, 55 ns typ RL = 100 Ω, CL = 35 pF. tBBM 30 ns min VS1 = VS2 = 10 V; see Figure 31. Transition Time, tTRANSITION 80 ns typ RL = 100 Ω, CL = 35 pF. 100 120 130 ns max VS = 10 V; see Figure 30. Charge Injection 4 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 32. Off Isolation −70 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 33. Channel-to-Channel Crosstalk −70 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 34. Total Harmonic Distortion (THD + N) 0.057 % typ RL = 110 Ω, 15 V p-p, f = 20 Hz to 20 kHz; see Figure 36. Rev. B | Page 3 of 20 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAMS PRODUCT HIGHLIGHTS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ±15 V DUAL SUPPLY 12 V SINGLE SUPPLY ±5 V DUAL SUPPLY CONTINUOUS CURRENT PER CHANNEL TIMING CHARACTERISTICS TIMING DIAGRAM ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS TERMINOLOGY THEORY OF OPERATION SERIAL INTERFACE INPUT SHIFT REGISTER POWER-ON RESET DAISY-CHAINING OUTLINE DIMENSIONS ORDERING GUIDE