Datasheet FDN359AN (Fairchild) - 2
| Manufacturer | Fairchild |
| Description | N-Channel Logic Level PowerTrench MOSFET |
| Pages / Page | 6 / 2 — FDN359AN. N-Channel Logic Level PowerTrenchTM MOSFET. Features. General … |
| File Format / Size | PDF / 288 Kb |
| Document Language | English |
FDN359AN. N-Channel Logic Level PowerTrenchTM MOSFET. Features. General Description. SOT-23. SuperSOTTM-6. SuperSOTTM-8. SO-8. SOT-223
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FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description
2.7 A, 30 V. R = 0.046 Ω @ V = 10 V DS(ON) GS This N-Channel Logic Level MOSFET is produced R = 0.060 Ω @ V = 4.5 V. DS(ON) GS using ON Semiconductor's advanced PowerTrench process that has been especially tailored Very fast switching. to minimize on-state resistance and yet maintain superior switching performance. Low gate charge (5nC typical). These devices are well suited for low voltage and High power version of industry standard SOT-23 battery powered applications where low in-line power package. Identical pin out to SOT-23 with 30% higher loss and fast switching are required. power handling capability.
SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16
D
D 359A S
G S
TM G SuperSOT -3 Absolute Maximum Ratings
T = 25oC unless other wise noted A
Symbol Parameter Ratings Units
V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Maximum Drain Current - Continuous (Note 1a) 2.7 A D - Pulsed 15 P Maximum Power Dissipation (Note 1a) 0.5 W D (Note 1b) 0.46 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG
THERMAL CHARACTERISTICS
Rθ Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W JA Rθ Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W JC © 1999 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev. 2 FDN359AN /D
2.7 A, 30 V. R = 0.046 Ω @ V = 10 V DS(ON) GS This N-Channel Logic Level MOSFET is produced R = 0.060 Ω @ V = 4.5 V. DS(ON) GS using ON Semiconductor's advanced PowerTrench process that has been especially tailored Very fast switching. to minimize on-state resistance and yet maintain superior switching performance. Low gate charge (5nC typical). These devices are well suited for low voltage and High power version of industry standard SOT-23 battery powered applications where low in-line power package. Identical pin out to SOT-23 with 30% higher loss and fast switching are required. power handling capability.
SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16
D
D 359A S
G S
TM G SuperSOT -3 Absolute Maximum Ratings
T = 25oC unless other wise noted A
Symbol Parameter Ratings Units
V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Maximum Drain Current - Continuous (Note 1a) 2.7 A D - Pulsed 15 P Maximum Power Dissipation (Note 1a) 0.5 W D (Note 1b) 0.46 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG
THERMAL CHARACTERISTICS
Rθ Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W JA Rθ Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W JC © 1999 Semiconductor Components Industries, LLC. Publication Order Number: October-2017, Rev. 2 FDN359AN /D
