Datasheet FDS6679 (Fairchild) - 5

ManufacturerFairchild
Description30 Volt P-Channel PowerTrench MOSFET
Pages / Page6 / 5 — FDS6679 Typical Characteristics 6000. VDS = -5V ID = -13A -10V f = 1 MHz. …
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FDS6679 Typical Characteristics 6000. VDS = -5V ID = -13A -10V f = 1 MHz. VGS = 0 V 5000 8

FDS6679 Typical Characteristics 6000 VDS = -5V ID = -13A -10V f = 1 MHz VGS = 0 V 5000 8

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FDS6679 Typical Characteristics 6000
VDS = -5V ID = -13A -10V f = 1 MHz
VGS = 0 V 5000 8
-15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 CISS 4000
3000
2000
COSS 1000 CRSS
0 0
0 10 20 30 40 50 60 70 80 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. P(pk), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 20 25 30 50
RDS(ON) LIMIT 100µs
1ms
10ms 10 100ms
1s
10s 1 DC VGS = -10V
SINGLE PULSE
RθJA = 125oC/W
o TA = 25 C 0.01
0.01 0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE
RθJA = 125°C/W
TA = 25°C 40 30 20 10 0
0.001 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE 15 Figure 8. Capacitance Characteristics. 100 0.1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0.01 0.1 1
t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum
Power Dissipation. 1
D = 0.5 RθJA(t) = r(t) * RθJA
o RθJA = 125 C/W 0.2 0.1 0.1
0.05 P(pk)
0.02 0.01 t1
t2
TJ -TA = P * RθJA(t)
Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001
0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design. FDS6679 Rev C1 (W)