Datasheet MBT3946DW1T1G, SMBT3946DW1T1G (ON Semiconductor) - 9

ManufacturerON Semiconductor
DescriptionComplementary General Purpose Transistor
Pages / Page13 / 9 — MBT3946DW1T1G, SMBT3946DW1T1G. (PNP). TYPICAL STATIC CHARACTERISTICS. …
Revision7
File Format / SizePDF / 251 Kb
Document LanguageEnglish

MBT3946DW1T1G, SMBT3946DW1T1G. (PNP). TYPICAL STATIC CHARACTERISTICS. Figure 32. DC Current Gain

MBT3946DW1T1G, SMBT3946DW1T1G (PNP) TYPICAL STATIC CHARACTERISTICS Figure 32 DC Current Gain

Model Line for this Datasheet

Text Version of Document

MBT3946DW1T1G, SMBT3946DW1T1G (PNP) TYPICAL STATIC CHARACTERISTICS
2.0 TJ = +125°C VCE = 1.0 V 1.0 +25°C 0.7 -55°C GAIN (NORMALIZED) 0.5 0.3 (PNP) 0.2 FEh , DC CURRENT 0.10.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA)
Figure 32. DC Current Gain
1.0 TS) T (PNP) J = 25°C 0.8 TAGE (VOL IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 OR EMITTER VOL 0.2 CEV , COLLECT 00.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA)
Figure 33. Collector Saturation Region
1.0 1.0 T ° J = 25°C VBE(sat) @ IC/IB = 10 0.8 0.5 +25°C TO +125°C q V VC FOR VCE(sat) BE @ VCE = 1.0 V TS) 0 0.6 -55°C TO +25°C (PNP) -0.5 (PNP) TAGE (VOL 0.4 +25°C TO +125°C , VOL TURE COEFFICIENTS (mV/ C) V -1.0 VCE(sat) @ IC/IB = 10 -55°C TO +25°C 0.2 -1.5 qVB FOR VBE(sat) , TEMPERA Vq 0 -2.0 1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 34. “ON” Voltages Figure 35. Temperature Coefficients http://onsemi.com 9