Datasheet 2N5087 (ON Semiconductor) - 4
| Manufacturer | ON Semiconductor |
| Description | Amplifier Transistor PNP Silicon |
| Pages / Page | 8 / 4 — 2N5087. TYPICAL NOISE CHARACTERISTICS. Figure 1. Noise Voltage. Figure 2. … |
| Revision | 5 |
| File Format / Size | PDF / 259 Kb |
| Document Language | English |
2N5087. TYPICAL NOISE CHARACTERISTICS. Figure 1. Noise Voltage. Figure 2. Noise Current. Figure 3. Narrow Band, 100 Hz
Model Line for this Datasheet
Text Version of Document
2N5087 TYPICAL NOISE CHARACTERISTICS
(VCE = − 5.0 Vdc, TA = 25°C) 10 1.0 BANDWIDTH = 1.0 Hz 7.0 BANDWIDTH = 1.0 Hz 7.0 RS ≈ 0 5.0 RS ≈ ∞ I I C = 10 mA 3.0 C = 1.0 mA (nV) 5.0 2.0 TAGE 30 mA 300 mA 3.0 1.0 100 mA 0.7 100 mA 300 mA 0.5 , NOISE VOL n 2.0 1.0 mA , NOISE CURRENT (pA) e I n 0.3 30 mA 0.2 10 mA 1.0 0.1 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k f, FREQUENCY (Hz) f, FREQUENCY (Hz)
Figure 1. Noise Voltage Figure 2. Noise Current
1.0M 1.0M 500k BANDWIDTH = 1.0 Hz 500k BANDWIDTH = 1.0 Hz 200k 200k (OHMS) 100k (OHMS) 100k 50k 50k ANCE ANCE 20k 20k 0.5 dB 10k 10k 0.5 dB 5.0k 1.0 dB 5.0k 2.0k 2.0k 1.0 dB 1.0k 2.0 dB , SOURCE RESIST , SOURCE RESIST 1.0k S 2.0 dB 500 S R 500 3.0 dB R 3.0 dB 200 200 5.0 dB 5.0 dB 100 100 10 20 30 50 70 100 200 300 500 700 1.0k 10 20 30 50 70 100 200 300 500 700 1.0k IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. Narrow Band, 100 Hz Figure 4. Narrow Band, 1.0 kHz
1.0M 500k 10 Hz to 15.7 kHz 200k (OHMS) 100k Noise Figure is Defined as: 50k ANCE 20k NF + 20 log ƪen2 ) 4KTRS ) In 2RS2ƫ1ń2 10 4KTR 10k S 0.5 dB en = Noise Voltage of the Transistor referred to the input. (Figure 3) 5.0k In = Noise Current of the Transistor referred to the input. (Figure 4) 2.0k 1.0 dB K = Boltzman’s Constant (1.38 x 10−23 j/°K) 1.0k , SOURCE RESIST T = Temperature of the Source Resistance (°K) S 2.0 dB 500 R RS = Source Resistance (Ohms) 3.0 dB 200 5.0 dB 100 10 20 30 50 70 100 200 300 500 700 1.0k IC, COLLECTOR CURRENT (mA)
Figure 5. Wideband http://onsemi.com 3
(VCE = − 5.0 Vdc, TA = 25°C) 10 1.0 BANDWIDTH = 1.0 Hz 7.0 BANDWIDTH = 1.0 Hz 7.0 RS ≈ 0 5.0 RS ≈ ∞ I I C = 10 mA 3.0 C = 1.0 mA (nV) 5.0 2.0 TAGE 30 mA 300 mA 3.0 1.0 100 mA 0.7 100 mA 300 mA 0.5 , NOISE VOL n 2.0 1.0 mA , NOISE CURRENT (pA) e I n 0.3 30 mA 0.2 10 mA 1.0 0.1 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k f, FREQUENCY (Hz) f, FREQUENCY (Hz)
Figure 1. Noise Voltage Figure 2. Noise Current
1.0M 1.0M 500k BANDWIDTH = 1.0 Hz 500k BANDWIDTH = 1.0 Hz 200k 200k (OHMS) 100k (OHMS) 100k 50k 50k ANCE ANCE 20k 20k 0.5 dB 10k 10k 0.5 dB 5.0k 1.0 dB 5.0k 2.0k 2.0k 1.0 dB 1.0k 2.0 dB , SOURCE RESIST , SOURCE RESIST 1.0k S 2.0 dB 500 S R 500 3.0 dB R 3.0 dB 200 200 5.0 dB 5.0 dB 100 100 10 20 30 50 70 100 200 300 500 700 1.0k 10 20 30 50 70 100 200 300 500 700 1.0k IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. Narrow Band, 100 Hz Figure 4. Narrow Band, 1.0 kHz
1.0M 500k 10 Hz to 15.7 kHz 200k (OHMS) 100k Noise Figure is Defined as: 50k ANCE 20k NF + 20 log ƪen2 ) 4KTRS ) In 2RS2ƫ1ń2 10 4KTR 10k S 0.5 dB en = Noise Voltage of the Transistor referred to the input. (Figure 3) 5.0k In = Noise Current of the Transistor referred to the input. (Figure 4) 2.0k 1.0 dB K = Boltzman’s Constant (1.38 x 10−23 j/°K) 1.0k , SOURCE RESIST T = Temperature of the Source Resistance (°K) S 2.0 dB 500 R RS = Source Resistance (Ohms) 3.0 dB 200 5.0 dB 100 10 20 30 50 70 100 200 300 500 700 1.0k IC, COLLECTOR CURRENT (mA)
Figure 5. Wideband http://onsemi.com 3
