Datasheet MBD701, MMBD701L, SMMBD701L (ON Semiconductor)
| Manufacturer | ON Semiconductor |
| Description | Silicon Hot-Carrier Diodes Schottky Barrier Diodes |
| Pages / Page | 6 / 1 — Schottky Barrier Diodes. www.onsemi.com. Features. TO−92 2−Lead. SOT−23 … |
| Revision | 7 |
| File Format / Size | PDF / 188 Kb |
| Document Language | English |
Schottky Barrier Diodes. www.onsemi.com. Features. TO−92 2−Lead. SOT−23 (TO−236). CASE 182. CASE 318. STYLE 1. STYLE 8. TO−92. SOT−23
Model Line for this Datasheet
Text Version of Document
link to page 2 MBD701, MMBD701L, SMMBD701L Silicon Hot-Carrier Diodes
Schottky Barrier Diodes www.onsemi.com
These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package.
Features TO−92 2−Lead SOT−23 (TO−236)
•
CASE 182 CASE 318
Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
STYLE 1 STYLE 8
• Very Low Capacitance − 1.0 pF @ VR = 20 V • High Reverse Voltage − to 70 V
TO−92 SOT−23
• Low Reverse Leakage − 200 nA (Max) 2 1 3 1 • CATHODE ANODE CATHODE ANODE S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Qualified and PPAP
MARKING DIAGRAMS
Capable • These Devices are Pb−Free and are RoHS Compliant MBD 701
MAXIMUM RATINGS
AYW 5H M G G G G
Rating Symbol Value Unit
1 Reverse Voltage VR 70 V Forward Power Dissipation PF
TO−92 SOT−23
@ TA = 25°C mW MBD701 280 A = Assembly Location MMBD701L, SMMBD701L 200 Y = Year W = Work Week Derate above 25°C mW/°C MBD701 2.8 5H = Device Code (SOT−23) MMBD701L, SMMBD701L 2.0 M = Date Code* G = Pb−Free Package Operating Junction Temperature TJ −55 to +125 °C (Note: Microdot may be in either location) Range *Date Code orientation and/or overbar may vary Storage Temperature Range Tstg −55 to +150 °C depending upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be
ORDERING INFORMATION
assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016 − Rev. 7 MBD701/D
Schottky Barrier Diodes www.onsemi.com
These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package.
Features TO−92 2−Lead SOT−23 (TO−236)
•
CASE 182 CASE 318
Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
STYLE 1 STYLE 8
• Very Low Capacitance − 1.0 pF @ VR = 20 V • High Reverse Voltage − to 70 V
TO−92 SOT−23
• Low Reverse Leakage − 200 nA (Max) 2 1 3 1 • CATHODE ANODE CATHODE ANODE S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Qualified and PPAP
MARKING DIAGRAMS
Capable • These Devices are Pb−Free and are RoHS Compliant MBD 701
MAXIMUM RATINGS
AYW 5H M G G G G
Rating Symbol Value Unit
1 Reverse Voltage VR 70 V Forward Power Dissipation PF
TO−92 SOT−23
@ TA = 25°C mW MBD701 280 A = Assembly Location MMBD701L, SMMBD701L 200 Y = Year W = Work Week Derate above 25°C mW/°C MBD701 2.8 5H = Device Code (SOT−23) MMBD701L, SMMBD701L 2.0 M = Date Code* G = Pb−Free Package Operating Junction Temperature TJ −55 to +125 °C (Note: Microdot may be in either location) Range *Date Code orientation and/or overbar may vary Storage Temperature Range Tstg −55 to +150 °C depending upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be
ORDERING INFORMATION
assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 1994
1
Publication Order Number:
October, 2016 − Rev. 7 MBD701/D
