Datasheet QSE773 (ON Semiconductor) - 3
| Manufacturer | ON Semiconductor |
| Description | Sidelooker PIN Photodiode |
| Pages / Page | 5 / 3 — QSE773 — Sidelooker Pin Photodiode. Absolute Maximum Ratings. Symbol. … |
| Revision | 2 |
| File Format / Size | PDF / 826 Kb |
| Document Language | English |
QSE773 — Sidelooker Pin Photodiode. Absolute Maximum Ratings. Symbol. Parameters. Value. Units. Notes:. Electrical Characteristics
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QSE773 — Sidelooker Pin Photodiode Absolute Maximum Ratings
(TA = 25°C unless otherwise noted) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol Parameters Value Units
TOPR Operating Temperature -40 to +85 °C TSTG Storage Temperature -40 to +85 °C TSOL-I Soldering Temperature (Iron)(4)(5)(6)(7) 240 for 5 sec. °C TSOL-F Soldering Temperature (Flow)(4)(5)(7) 260 for 10 sec °C VR Reverse Voltage 32 V PD Power Dissipation(3) 150 mW
Notes:
3. Derate power dissipation linearly 2.50mW/°C above 25°C. 4. RMA flux is recommended. 5. Methanol or Isopropyl alcohols are recommended as cleaning agents. 6. Soldering iron tip 1/16” (1.6 mm) from housing. 7. As long as leads are not under any stress or spring tension.
Electrical Characteristics
(TA = 25°C)
Symbol Parameter Test Conditions Min. Typ. Max. Units
VR Reverse Voltage IR = 0.1mA, 32 E 2 V e = 0mW/cm IR(D) Dark Reverse Current VR = 10 V, E 2 30 nA e = 0mW/cm λPK Peak Sensitivity VR = 5V 940 nm Θ Reception Angle at 1/2 Power ±60 ° IPH Photo Current(8) E 2 e = 1.0mW/cm , VR = 5V 30 µA ISC Short Circuit Current(8) Ee = 1.0mW/cm2 18 µA C Capacitance VR = 3V 25 pF tr Rise Time VR = 5V, RL = 1kΩ 50 ns tf Fall Time VR = 5V, RL = 1kΩ 50 ns
Notes:
8. Light source is an GaAs LED which has a peak emission wavelength of 940nm. 9. All measurements made under pulse conditions. www.onsemi.com 2
(TA = 25°C unless otherwise noted) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol Parameters Value Units
TOPR Operating Temperature -40 to +85 °C TSTG Storage Temperature -40 to +85 °C TSOL-I Soldering Temperature (Iron)(4)(5)(6)(7) 240 for 5 sec. °C TSOL-F Soldering Temperature (Flow)(4)(5)(7) 260 for 10 sec °C VR Reverse Voltage 32 V PD Power Dissipation(3) 150 mW
Notes:
3. Derate power dissipation linearly 2.50mW/°C above 25°C. 4. RMA flux is recommended. 5. Methanol or Isopropyl alcohols are recommended as cleaning agents. 6. Soldering iron tip 1/16” (1.6 mm) from housing. 7. As long as leads are not under any stress or spring tension.
Electrical Characteristics
(TA = 25°C)
Symbol Parameter Test Conditions Min. Typ. Max. Units
VR Reverse Voltage IR = 0.1mA, 32 E 2 V e = 0mW/cm IR(D) Dark Reverse Current VR = 10 V, E 2 30 nA e = 0mW/cm λPK Peak Sensitivity VR = 5V 940 nm Θ Reception Angle at 1/2 Power ±60 ° IPH Photo Current(8) E 2 e = 1.0mW/cm , VR = 5V 30 µA ISC Short Circuit Current(8) Ee = 1.0mW/cm2 18 µA C Capacitance VR = 3V 25 pF tr Rise Time VR = 5V, RL = 1kΩ 50 ns tf Fall Time VR = 5V, RL = 1kΩ 50 ns
Notes:
8. Light source is an GaAs LED which has a peak emission wavelength of 940nm. 9. All measurements made under pulse conditions. www.onsemi.com 2
