Datasheet STPS2H100 (STMicroelectronics) - 2

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STPS2H100 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 100 V SMA Tl = 130 °C, δ = 0.5 SMB Tl = 135 °C, δ = 0.5 IF(AV) Average forward current 2 A SMA Flat, SMA Flat Notch Tl = 145 °C, δ = 0.5 SMB Flat Tl = 150 °C, δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 75 A PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 173 W Tstg Storage temperature range -65 to +175 °C Tj Maximum operating junction temperature(1) 175 °C 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Table 2. Thermal resistance parameters Symbol Parameter Max. value Unit
SMA 30 SMA Flat, SMA Flat Notch 20 Rth(j-l) Junction to lead °C/W SMB 25 SMB Flat 15 For more information, please refer to the following application note : • AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit
Tj = 25 °C - 1.00 µA I (1) R Reverse leakage current VR = VRRM Tj = 125 °C - 0.40 1.00 mA Tj = 25 °C - 0.79 IF = 2 A Tj = 125 °C - 0.60 0.65 V (2) F Forward voltage drop V Tj = 25 °C - 0.88 IF = 4 A Tj = 125 °C - 0.69 0.74 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.56 x I 2 F(AV) + 0.045 x IF (RMS)
DS1452
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Rev 10 page 2/19
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 SMA Flat package information 2.2 SMA Flat Notch package information 2.3 SMA package information 2.4 SMB package information 2.5 SMB Flat package information 3 Ordering Information Revision history