Datasheet IRLB8743PbF (Infineon) - 2
| Manufacturer | Infineon |
| Description | HEXFET Power MOSFET |
| Pages / Page | 10 / 2 — Static @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. … |
| Revision | 01_01 |
| File Format / Size | PDF / 282 Kb |
| Document Language | English |
Static @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. Max. Units. Conditions. Avalanche Characteristics. Typ. Max
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IRLB8743PbF
Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 17 ––– mV/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 2.5 3.2 VGS = 10V, ID = 40A e mΩ ––– 3.5 4.2 VGS = 4.5V, ID = 32A e VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V ∆ V V DS = VGS, ID = 100µA GS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -7.7 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 VDS = 24V, VGS = 0V µA ––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance 190 ––– ––– S VDS = 15V, ID = 32A Qg Total Gate Charge ––– 36 54 Qgs1 Pre-Vth Gate-to-Source Charge ––– 9.1 ––– VDS = 15V Qgs2 Post-Vth Gate-to-Source Charge ––– 4.2 ––– nC VGS = 4.5V Qgd Gate-to-Drain Charge ––– 13 ––– ID = 32A Qgodr Gate Charge Overdrive ––– 13 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 17.2 ––– Qoss Output Charge ––– 21 ––– nC VDS = 16V, VGS = 0V RG Gate Resistance ––– 0.85 1.5 Ω td(on) Turn-On Delay Time ––– 23 ––– VDD = 15V, VGS = 4.5Ve tr Rise Time ––– 92 ––– ID = 32A ns td(off) Turn-Off Delay Time ––– 25 ––– RG = 1.8Ω tf Fall Time ––– 36 ––– Ciss Input Capacitance ––– 5110 ––– VGS = 0V Coss Output Capacitance ––– 960 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 440 ––– ƒ = 1.0MHz
Avalanche Characteristics Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energyd ––– 310 mJ IAR Avalanche Currentc ––– 32 A EAR Repetitive Avalanche Energy c ––– 14 mJ
Diode Characteristics Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– MOSFET symbol 150f (Body Diode) showing the A ISM Pulsed Source Current ––– ––– integral reverse 620 (Body Diode)c p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 32A, VGS = 0V e trr Reverse Recovery Time ––– 29 44 ns TJ = 25°C, IF = 32A, VDD = 15V Qrr Reverse Recovery Charge ––– 49 74 nC di/dt = 200A/µs e ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com
Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 17 ––– mV/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 2.5 3.2 VGS = 10V, ID = 40A e mΩ ––– 3.5 4.2 VGS = 4.5V, ID = 32A e VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V ∆ V V DS = VGS, ID = 100µA GS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -7.7 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 VDS = 24V, VGS = 0V µA ––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance 190 ––– ––– S VDS = 15V, ID = 32A Qg Total Gate Charge ––– 36 54 Qgs1 Pre-Vth Gate-to-Source Charge ––– 9.1 ––– VDS = 15V Qgs2 Post-Vth Gate-to-Source Charge ––– 4.2 ––– nC VGS = 4.5V Qgd Gate-to-Drain Charge ––– 13 ––– ID = 32A Qgodr Gate Charge Overdrive ––– 13 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 17.2 ––– Qoss Output Charge ––– 21 ––– nC VDS = 16V, VGS = 0V RG Gate Resistance ––– 0.85 1.5 Ω td(on) Turn-On Delay Time ––– 23 ––– VDD = 15V, VGS = 4.5Ve tr Rise Time ––– 92 ––– ID = 32A ns td(off) Turn-Off Delay Time ––– 25 ––– RG = 1.8Ω tf Fall Time ––– 36 ––– Ciss Input Capacitance ––– 5110 ––– VGS = 0V Coss Output Capacitance ––– 960 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 440 ––– ƒ = 1.0MHz
Avalanche Characteristics Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energyd ––– 310 mJ IAR Avalanche Currentc ––– 32 A EAR Repetitive Avalanche Energy c ––– 14 mJ
Diode Characteristics Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– MOSFET symbol 150f (Body Diode) showing the A ISM Pulsed Source Current ––– ––– integral reverse 620 (Body Diode)c p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 32A, VGS = 0V e trr Reverse Recovery Time ––– 29 44 ns TJ = 25°C, IF = 32A, VDD = 15V Qrr Reverse Recovery Charge ––– 49 74 nC di/dt = 200A/µs e ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com
