Datasheet IRLR8743PbF, IRLU8743PbF (Infineon) - 2
| Manufacturer | Infineon |
| Description | HEXFET Power MOSFET |
| Pages / Page | 12 / 2 — Static @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. … |
| Revision | 01_01 |
| File Format / Size | PDF / 387 Kb |
| Document Language | English |
Static @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. Max. Units. Conditions. Avalanche Characteristics. Typ. Max
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IRLR/U8743PbF
Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 20 ––– mV/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 2.4 3.1 VGS = 10V, ID = 25A e mΩ ––– 3.0 3.9 VGS = 4.5V, ID = 20A e VGS(th) Gate Threshold Voltage 1.35 1.9 2.35 V VDS = VGS, ID = 100µA ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -6.4 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 VDS = 24V, VGS = 0V µA ––– ––– 150 VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance 89 ––– ––– S VDS = 15V, ID = 20A Qg Total Gate Charge ––– 39 59 Qgs1 Pre-Vth Gate-to-Source Charge ––– 10 ––– VDS = 15V Qgs2 Post-Vth Gate-to-Source Charge ––– 3.9 ––– nC VGS = 4.5V Qgd Gate-to-Drain Charge ––– 13 ––– ID = 20A Qgodr Gate Charge Overdrive ––– 12 ––– See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 17 ––– Qoss Output Charge ––– 21 ––– nC VDS = 16V, VGS = 0V RG Gate Resistance ––– 0.85 1.5 Ω td(on) Turn-On Delay Time ––– 19 ––– VDD = 15V, VGS = 4.5Ve tr Rise Time ––– 35 ––– ID = 20A ns td(off) Turn-Off Delay Time ––– 21 ––– RG = 1.8Ω tf Fall Time ––– 17 ––– See Fig. 14 Ciss Input Capacitance ––– 4880 ––– VGS = 0V Coss Output Capacitance ––– 950 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 470 ––– ƒ = 1.0MHz
Avalanche Characteristics Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energyd ––– 250 mJ IAR Avalanche Currentc ––– 20 A EAR Repetitive Avalanche Energy c ––– 13.5 mJ
Diode Characteristics Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– MOSFET symbol 160f (Body Diode) showing the A ISM Pulsed Source Current ––– ––– integral reverse 640 (Body Diode)c p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 20A, VGS = 0V e trr Reverse Recovery Time ––– 18 27 ns TJ = 25°C, IF = 20A, VDD = 15V Qrr Reverse Recovery Charge ––– 32 48 nC di/dt = 300A/µs e ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com
Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 20 ––– mV/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 2.4 3.1 VGS = 10V, ID = 25A e mΩ ––– 3.0 3.9 VGS = 4.5V, ID = 20A e VGS(th) Gate Threshold Voltage 1.35 1.9 2.35 V VDS = VGS, ID = 100µA ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -6.4 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 VDS = 24V, VGS = 0V µA ––– ––– 150 VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V gfs Forward Transconductance 89 ––– ––– S VDS = 15V, ID = 20A Qg Total Gate Charge ––– 39 59 Qgs1 Pre-Vth Gate-to-Source Charge ––– 10 ––– VDS = 15V Qgs2 Post-Vth Gate-to-Source Charge ––– 3.9 ––– nC VGS = 4.5V Qgd Gate-to-Drain Charge ––– 13 ––– ID = 20A Qgodr Gate Charge Overdrive ––– 12 ––– See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 17 ––– Qoss Output Charge ––– 21 ––– nC VDS = 16V, VGS = 0V RG Gate Resistance ––– 0.85 1.5 Ω td(on) Turn-On Delay Time ––– 19 ––– VDD = 15V, VGS = 4.5Ve tr Rise Time ––– 35 ––– ID = 20A ns td(off) Turn-Off Delay Time ––– 21 ––– RG = 1.8Ω tf Fall Time ––– 17 ––– See Fig. 14 Ciss Input Capacitance ––– 4880 ––– VGS = 0V Coss Output Capacitance ––– 950 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 470 ––– ƒ = 1.0MHz
Avalanche Characteristics Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energyd ––– 250 mJ IAR Avalanche Currentc ––– 20 A EAR Repetitive Avalanche Energy c ––– 13.5 mJ
Diode Characteristics Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– MOSFET symbol 160f (Body Diode) showing the A ISM Pulsed Source Current ––– ––– integral reverse 640 (Body Diode)c p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 20A, VGS = 0V e trr Reverse Recovery Time ––– 18 27 ns TJ = 25°C, IF = 20A, VDD = 15V Qrr Reverse Recovery Charge ––– 32 48 nC di/dt = 300A/µs e ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com
