Datasheet BSS123 (ON Semiconductor)
| Manufacturer | ON Semiconductor |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Pages / Page | 7 / 1 — DATA SHEET. www.onsemi.com. General Description. onsemi’s. SOT−23−3. CASE … |
| File Format / Size | PDF / 202 Kb |
| Document Language | English |
DATA SHEET. www.onsemi.com. General Description. onsemi’s. SOT−23−3. CASE 318−08. MARKING DIAGRAM. Features. ORDERING INFORMATION. Device
Model Line for this Datasheet
Text Version of Document
DATA SHEET www.onsemi.com
N-Channel Logic Level D Enhancement Mode Field Effect Transistor G BSS123 S
General Description
These N−Channel enhancement mode field effect transistors are produced using
onsemi’s
proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching
SOT−23−3 CASE 318−08
performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
MARKING DIAGRAM
3
Features
Drain • 0.17 A, 100 V ♦ RDS(on) = 6 @ VGS = 10 V SAMG ♦ RDS(on) = 10 @ VGS = 4.5 V G • High Density Cell Design for Extremely Low RDS(on) • Rugged and Reliable 1 2 Gate Source • Compact Industry Standard SOT−23 Surface Mount Package • SA = Specific Device Code This Device is Pb−Free and Halogen Free M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location.
ORDERING INFORMATION Device Package Shipping
† BSS123, SOT−23−3 3000 / BSS123−G (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
November, 2021 − Rev. 10 BSS123/D
N-Channel Logic Level D Enhancement Mode Field Effect Transistor G BSS123 S
General Description
These N−Channel enhancement mode field effect transistors are produced using
onsemi’s
proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching
SOT−23−3 CASE 318−08
performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
MARKING DIAGRAM
3
Features
Drain • 0.17 A, 100 V ♦ RDS(on) = 6 @ VGS = 10 V SAMG ♦ RDS(on) = 10 @ VGS = 4.5 V G • High Density Cell Design for Extremely Low RDS(on) • Rugged and Reliable 1 2 Gate Source • Compact Industry Standard SOT−23 Surface Mount Package • SA = Specific Device Code This Device is Pb−Free and Halogen Free M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location.
ORDERING INFORMATION Device Package Shipping
† BSS123, SOT−23−3 3000 / BSS123−G (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
November, 2021 − Rev. 10 BSS123/D
