Datasheet IRF1010N (International Rectifier) - 5
| Manufacturer | International Rectifier |
| Description | HEXFET Power MOSFET |
| Pages / Page | 8 / 5 — Fig 10a. Fig 9. Fig 10b. Fig 11 |
| File Format / Size | PDF / 222 Kb |
| Document Language | English |
Fig 10a. Fig 9. Fig 10b. Fig 11
Model Line for this Datasheet
Text Version of Document
IRF1010N 100 RD V LIMITED BY PACKAGE DS VGS 80 D.U.T. RG + -VDD 60 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 I , Drain Current (A) D
Fig 10a.
Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 T , Case Temperature ( C) ° C 10% V
Fig 9.
Maximum Drain Current Vs. GS t Case Temperature d(on) tr td(off) tf
Fig 10b.
Switching Time Waveforms 1 D = 0.50 thJC (Z ) 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE (THERMAL RESPONSE) 0.01 Thermal Response PDM t1 t 2 Notes: 1. Duty factor D = t / t 1 2 2. Peak T = P x Z + T J DM thJC C 0.01 0.00001 0.0001 0.001 0.01 0.1 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5
Fig 10a.
Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 T , Case Temperature ( C) ° C 10% V
Fig 9.
Maximum Drain Current Vs. GS t Case Temperature d(on) tr td(off) tf
Fig 10b.
Switching Time Waveforms 1 D = 0.50 thJC (Z ) 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE (THERMAL RESPONSE) 0.01 Thermal Response PDM t1 t 2 Notes: 1. Duty factor D = t / t 1 2 2. Peak T = P x Z + T J DM thJC C 0.01 0.00001 0.0001 0.001 0.01 0.1 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5
