Datasheet IRF, MTP (New Jersey Semiconductor) - 2

IRF120-123/IRF520-523
MTP10N08/10N10 Maximum Ratings
Rating
IRF120/122
IRF520/522
MTP10N10 Rating
MTP10N08 VDSS Drain to Source Voltage1 VDGR Drain to Gate Voltage1
RQS = 20 kft VGS Gate to Source Voltage ±20 ±20 ±20 V Operating Junction and
Storage Temperatures -55 to +150 -55 to +150 -55 to +150 °c 275 275 275 °c Characteristic Symbol Tj, T8|g TL Maximum Lead Temperature
for Soldering Purposes,
1/8" From Case for 5 s Rating
IRF122/123
IRF522/523 Unit 100 80 60 V 100 80 60 V Maximum Thermal Characteristics
IRF120-123/IRF520-523 MTP10N08/10 Thermal Resistance,
Junction to Case 3.12 1.67 "C/W RftJA Thermal Resistance,
Junction to Ambient 30/80 80 °C/W PD Total Power Dissipation
at Tc = 25°C 40 75 W IDM Pulsed Drain Current2 20 32 A R«JC Electrical Characteristics (Tc = 25°C unless otherwise noted)
Symbol Characteristic Win Max Unit Test Conditions Off Characteristics
V(BR)DSS loss IQSS Drain Source Breakdown Voltage1
IRF120/122/520/522/
MTP10N10
MTP10N08 80 IRF121/123/521/523 60 Zero Gate Voltage Drain Current Gate-Body Leakage Current
IRF120-123
IRF520-523/MTP10N08/10 V VGS = 0 V, ID = 250 MA 250 UA VDS -Rated VDSS. VGS -0 V 1000 MA VDS = 0.8 x Rated VDSs,
VGS = 0 V, T C =125°C nA VQS -± 20 v, VDS -o V 100 ±100
+ 500