IRFD110 www.vishay.com Vishay Siliconix RD VDS 1.0 VGS D.U.T. Rg +V 0.8 - DD 10 V 0.6 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % ain Current (A) 0.4 Fig. 10a - Switching Time Test Circuit , Dr I D 0.2 VDS 90 % 0.0 25 50 75 100 125 150 175 91127_09 TA, Ambient Temperature (°C) 10 % VGS t t t t d(on) r d(off) f Fig. 9 - Maximum Drain Current vs. Ambient TemperatureFig. 10b - Switching Time Waveforms 103 ) A 102 thJ 0 - 0.5 0.2 0.1 10 0.05 0.02 PDM 0.01 1 t mal Response (Z 1 Single Pulse t2 0.1 (Thermal Response) Ther Notes: 1. Duty Factor, D = t /t 1 2 2. Peak T = P x Z + T j DM thJC C 10-2 10-5 10-4 10-3 10-2 0.1 1 10 102 103 91127_11 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient S21-0885-Rev. D, 30-Aug-2021 5 Document Number: 91127 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000