Preliminary Datasheet EPC2304 (Efficient Power Conversion) - 3
| Manufacturer | Efficient Power Conversion |
| Description | 200 V, 260 A Enhancement Mode Power Transistor |
| Pages / Page | 7 / 3 — eGaN® FET DATASHEET. Figure 5a: Typical Capacitance (Linear Scale). … |
| File Format / Size | PDF / 1.2 Mb |
| Document Language | English |
eGaN® FET DATASHEET. Figure 5a: Typical Capacitance (Linear Scale). Figure 5b: Typical Capacitance (Log Scale)
Model Line for this Datasheet
Text Version of Document
eGaN® FET DATASHEET
EPC2304
Figure 5a: Typical Capacitance (Linear Scale) Figure 5b: Typical Capacitance (Log Scale)
3500 10000 3000 1000 2500 2000 COSS = CGD + CSD CISS = CGD + CGS 100 COSS = CGD + CSD CISS = CGD + CGS CRSS = CGD 1500 C
Capacitance (pF) Capacitance (pF)
RSS = CGD 1000 10 500 1 00 50 100 150 200 0 50 100 150 200
VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Figure 6: Typical Output Charge and COSS Stored Energy Figure 7: Typical Gate Charge
200 16 5 I 4 D = 32 A VDS = 100 V 150 12
µJ)
3 100 8
Stored Energy (
2
– Output charge (nC) OSS – C – Gate-to-Source Voltage (V) Q OSS
50 4
E OSS V GS
1 0 0 0 0 50 100 150 200 0 5 10 15 20 25
V QG – Gate Charge (nC) DS – Drain-to-Source Voltage (V) Figure 8: Typical Reverse Drain-Source Characteristics Figure 9: Typical Normalized On-State Resistance vs. Temp.
2.5 250 25˚C
DS(on)
125˚C I 200 D = 32 A 2.0 V V GS = 5 V GS = 0 V 150 1.5 100
– Source-to-Drain Current (A)
1.0
I SD
50
Normalized On-State Resistance R
0 0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 25 50 75 100 125 150
VSD – Source-to-Drain Voltage (V) TJ – Junction Temperature (°C)
Note: Negative gate drive voltage increases the reverse drain-source voltage. EPC recommends 0 V for OFF. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2022 | | 3
EPC2304
Figure 5a: Typical Capacitance (Linear Scale) Figure 5b: Typical Capacitance (Log Scale)
3500 10000 3000 1000 2500 2000 COSS = CGD + CSD CISS = CGD + CGS 100 COSS = CGD + CSD CISS = CGD + CGS CRSS = CGD 1500 C
Capacitance (pF) Capacitance (pF)
RSS = CGD 1000 10 500 1 00 50 100 150 200 0 50 100 150 200
VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Figure 6: Typical Output Charge and COSS Stored Energy Figure 7: Typical Gate Charge
200 16 5 I 4 D = 32 A VDS = 100 V 150 12
µJ)
3 100 8
Stored Energy (
2
– Output charge (nC) OSS – C – Gate-to-Source Voltage (V) Q OSS
50 4
E OSS V GS
1 0 0 0 0 50 100 150 200 0 5 10 15 20 25
V QG – Gate Charge (nC) DS – Drain-to-Source Voltage (V) Figure 8: Typical Reverse Drain-Source Characteristics Figure 9: Typical Normalized On-State Resistance vs. Temp.
2.5 250 25˚C
DS(on)
125˚C I 200 D = 32 A 2.0 V V GS = 5 V GS = 0 V 150 1.5 100
– Source-to-Drain Current (A)
1.0
I SD
50
Normalized On-State Resistance R
0 0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 25 50 75 100 125 150
VSD – Source-to-Drain Voltage (V) TJ – Junction Temperature (°C)
Note: Negative gate drive voltage increases the reverse drain-source voltage. EPC recommends 0 V for OFF. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2022 | | 3
