Preliminary Datasheet EPC2305 (Efficient Power Conversion) - 8
| Manufacturer | Efficient Power Conversion |
| Description | Enhancement Mode Power Transistor |
| Pages / Page | 8 / 8 — eGaN® FET DATASHEET. TRANSPARENT VIEW. PIN. DESCRIPTION. Transparent Top … |
| File Format / Size | PDF / 1.2 Mb |
| Document Language | English |
eGaN® FET DATASHEET. TRANSPARENT VIEW. PIN. DESCRIPTION. Transparent Top View. RECOMMENDED. LAND PATTERN. DIM. Nominal
Model Line for this Datasheet
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eGaN® FET DATASHEET
EPC2305
TRANSPARENT VIEW PIN DESCRIPTION 7 1
Gate
2
Source
6 3
Drain
4
Source
5 5
Drain
6
Source
7
Drain
4 3 1 2 Transparent Top View RECOMMENDED
c1 c2 Land pattern is solder mask defined. c4
LAND PATTERN
c3 (units in mm) f g
DIM Nominal
d1
A
5.4
B
3.4 c5
c1
2.1 d2 h
c2
0.90
c3
0.55
c4
1.20 e A
c5
0.975
d1
0.45
d2
0.35
e
0.85 R50
f
0.30
g
0.2
h
0.05 c3 d2 c4 B
Additional resources available:
• Assembly resources –
https://epc-co.com/epc/Portals/0/epc/documents/product-training/Appnote_GaNassembly.pdf
• Library of Altium footprints for production FETs and ICs –
https://epc-co.com/epc/documents/altium-files/EPC%20Altium%20Library.zip
(for preliminary device Altium footprints, contact EPC) Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein to improve reliability, function or design. EPC does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its Information subject to patent rights, nor the rights of others. change without notice. eGaN® is a registered trademark of Efficient Power Conversion Corporation. EPC Patent Listing: epc-co.com/epc/AboutEPC/Patents.aspx Revised December, 2022 EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2022 | | 8
eGaN® FET DATASHEET
EPC2305
TRANSPARENT VIEW PIN DESCRIPTION 7 1
Gate
2
Source
6 3
Drain
4
Source
5 5
Drain
6
Source
7
Drain
4 3 1 2 Transparent Top View RECOMMENDED
c1 c2 Land pattern is solder mask defined. c4
LAND PATTERN
c3 (units in mm) f g
DIM Nominal
d1
A
5.4
B
3.4 c5
c1
2.1 d2 h
c2
0.90
c3
0.55
c4
1.20 e A
c5
0.975
d1
0.45
d2
0.35
e
0.85 R50
f
0.30
g
0.2
h
0.05 c3 d2 c4 B
Additional resources available:
• Assembly resources –
https://epc-co.com/epc/Portals/0/epc/documents/product-training/Appnote_GaNassembly.pdf
• Library of Altium footprints for production FETs and ICs –
https://epc-co.com/epc/documents/altium-files/EPC%20Altium%20Library.zip
(for preliminary device Altium footprints, contact EPC) Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein to improve reliability, function or design. EPC does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its Information subject to patent rights, nor the rights of others. change without notice. eGaN® is a registered trademark of Efficient Power Conversion Corporation. EPC Patent Listing: epc-co.com/epc/AboutEPC/Patents.aspx Revised December, 2022 EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2022 | | 8
