Datasheet PEMD12, PUMD12 (Nexperia) - 8
| Manufacturer | Nexperia |
| Description | NPN/PNP Resistor-Equipped Transistors; R1 = 47 kΩ, R2 = 47 kΩ |
| Pages / Page | 17 / 8 — NXP Semiconductors. PEMD12; PUMD12. NPN/PNP resistor-equipped … |
| Revision | 12102022 |
| File Format / Size | PDF / 1.3 Mb |
| Document Language | English |
NXP Semiconductors. PEMD12; PUMD12. NPN/PNP resistor-equipped transistors; R1 = 47 k. , R2 = 47 k. Fig 4
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Text Version of Document
NXP Semiconductors PEMD12; PUMD12 NPN/PNP resistor-equipped transistors; R1 = 47 k , R2 = 47 k
006aac752 006aac753 103 1 hFE (1) (2) VCEsat (V) (3) 102 (1) (2) 10-1 (3) 10 1 10-2 10-1 1 102 10 10-1 1 102 10 IC (mA) IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C
Fig 4. TR1 (NPN): DC current gain as a function of Fig 5. TR1 (NPN): Collector-emitter saturation collector current; typical values voltage as a function of collector current; typical values
006aac754 006aac755 10 10 VI(on) VI(off) (V) (V) (1) (1) (2) (2) (3) (3) 1 1 10-1 10-1 10-1 1 102 10 10-1 1 10 IC (mA) IC (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = 40 C (1) Tamb = 40 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 100 C
Fig 6. TR1 (NPN): On-state input voltage as a Fig 7. TR1 (NPN): Off-state input voltage as a function of collector current; typical values function of collector current; typical values
PEMD12_PUMD12 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 21 November 2011 7 of 16
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
006aac752 006aac753 103 1 hFE (1) (2) VCEsat (V) (3) 102 (1) (2) 10-1 (3) 10 1 10-2 10-1 1 102 10 10-1 1 102 10 IC (mA) IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C
Fig 4. TR1 (NPN): DC current gain as a function of Fig 5. TR1 (NPN): Collector-emitter saturation collector current; typical values voltage as a function of collector current; typical values
006aac754 006aac755 10 10 VI(on) VI(off) (V) (V) (1) (1) (2) (2) (3) (3) 1 1 10-1 10-1 10-1 1 102 10 10-1 1 10 IC (mA) IC (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = 40 C (1) Tamb = 40 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 100 C
Fig 6. TR1 (NPN): On-state input voltage as a Fig 7. TR1 (NPN): Off-state input voltage as a function of collector current; typical values function of collector current; typical values
PEMD12_PUMD12 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 21 November 2011 7 of 16
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
