Datasheet STB75NF75, STP75NF75, STP75NF75FP (STMicroelectronics) - 3

STB75NF75 - STP75NF75 - STP75NF75FP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit D2PAK /TO-220 TO-220FP
VDS Drain-source voltage (VGS = 0) 75 V VDGR Drain-gate voltage (RGS = 20KΩ) 75 V VGS Gate-source voltage ± 20 V I (1) D Drain current (continuous) at TC = 25°C 80 80 A I (1) D Drain current (continuous) at TC=100°C 70 70 A I (2) DM Drain current (pulsed) 320 320 A PTOT Total dissipation at TC = 25°C 300 45 W Derating factor 2.0 0.3 W/°C dv/dt (3) Peak diode recovery voltage slope 12 V/ns E (4) AS Single pulse avalanche energy 700 mJ Insulation withstand voltage (RMS) from all VISO -- 2000 V three leads to external heat sink (t=1s;TC=25°C) TJ Operating junction temperature -55 to 175 °C T Storage temperature stg 1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD ≤ 80A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 4. Starting TJ = 25 oC, ID = 40A, VDD = 37.5V
Table 2. Thermal data Value Symbol Parameter Unit D2PAK /TO-220 TO-220FP
RthJC Thermal resistance junction-case max 0.5 3.33 °C/W RthJA Thermal resistance junction-ambient max 62.5 °C/W Maximum lead temperature for soldering Tl 300 °C purpose(1) 1. 1.6mm from case for 10sec) 3/16 Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data 5 Packaging mechanical data 6 Revision history