Datasheet FDC5614P (Fairchild) - 3

FDC5614P TYPICAL CHARACTERISTICS
15 1.8 VGS = −10 V −6.0 V V −5.0 V GS = −3.5 V −4.5 V −4.0 V 12 1.6 −4.0 V −3.5 V
−Source
−4.5 V 9 1.4 −5.0 V −6.0 V 6 −3.0 V
−Resistance
1.2
on , Drain Current (A)
−7.0 V
I D ,Normalized Drain
3 1.0 −10.0 V −2.5 V
DS(on)R
−8.0 V 0 0.8 0 1 2 3 4 5 0 2 4 6 8 10
VDS , Drain−Source Voltage (V) ID, Drain Current (A) Figure 1. On−Region Characteristics Figure 2. On−Resistance Variation with Drain Current and Gate Voltage
1.8 0.4 ID = −3.0 A ID = −1.5 A 1.6
)
V
ource
GS = −10 V
W −S
0.3 1.4 1.2 0.2 T 1.0
−Resistance (
A = 125°C
−Resistance , On on
0.8
, Normalized Drain
0.1
DS(on)
TA = 25°C 0.6
R DS(on)R
0.4 0 −50 −25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, Junction Temperature (
5
C) VGS , Gate to Source Voltage (V) Figure 3. On−Resistance Variation with Temperature Figure 4. On−Resistance Variation with Gate−to−Source Voltage
15 100 VDS = −5 V TA = −55°C VGS = 0 V 25°C 12 10 125°C 9 1 6 0.1
, Drain Current (A)
T
I D
A = 125°C 3
, Reverse Drain Current (A)
0.01
I S
25°C −55°C 0 0.001 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VGS, Gate to Source Voltage (V) VSD, Body Diode Forward Voltage (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature www.onsemi.com 3