Datasheet IRF840L, SiHF840L (Vishay) - 3
| Manufacturer | Vishay |
| Description | Power MOSFET |
| Pages / Page | 10 / 3 — IRF840L, SiHF840L. TYPICAL CHARACTERISTICS. Fig. 1 - Typical Output … |
| File Format / Size | PDF / 221 Kb |
| Document Language | English |
IRF840L, SiHF840L. TYPICAL CHARACTERISTICS. Fig. 1 - Typical Output Characteristics, TC = 25 °C
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IRF840L, SiHF840L
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) V 3.0 GS I = 8.0 A Top 15 V D V = 10 V 10 V GS 2.5 8.0 V 7.0 V 101 6.0 V 5.5 V 2.0 5.0 V ed) Bottom 4.5 V 1.5 maliz ain Current (A) , Dr (Nor 1.0 I D 4.5 V ain-to-Source On Resistance , Dr 0.5 100 20 µs Pulse Width T = 25 °C C DS(on) 0.0 R 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 91069_01 VDS, Drain-to-Source Voltage (V) 91069_04 TJ, Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature
V 2500 GS VGS = 0 V, f = 1 MHz Top 15 V C = C + C , C Shorted iss gs gd ds 101 10 V 2000 C = C rss gd 8.0 V C = C + C oss ds gd 7.0 V 6.0 V C 5.5 V 1500 iss 4.5 V 5.0 V Bottom 4.5 V ain Current (A) 1000 , Dr Capacitance (pF) I D Coss 500 100 20 µs Pulse Width Crss T = 150 °C C 0 100 101 100 101 91069_02 VDS, Drain-to-Source Voltage (V) 91069_05 VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20 I = 8.0 A D 150 °C 101 16 V = 400 V DS ltage (V) V = 250 V o DS V 25 °C V = 100 V 12 DS ain Current (A) 8 100 , Dr I D , Gate-to-Source 4 20 µs Pulse Width GS For test circuit V = 50 V V DS see figure 13 0 4 5 6 7 8 9 10 0 15 30 45 60 75 91069_03 VGS, Gate-to-Source Voltage (V) 91069_06 QG, Total Gate Charge (nC)
Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
S21-0901-Rev. D, 30-Aug-2021
3
Document Number: 91069 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) V 3.0 GS I = 8.0 A Top 15 V D V = 10 V 10 V GS 2.5 8.0 V 7.0 V 101 6.0 V 5.5 V 2.0 5.0 V ed) Bottom 4.5 V 1.5 maliz ain Current (A) , Dr (Nor 1.0 I D 4.5 V ain-to-Source On Resistance , Dr 0.5 100 20 µs Pulse Width T = 25 °C C DS(on) 0.0 R 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 91069_01 VDS, Drain-to-Source Voltage (V) 91069_04 TJ, Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature
V 2500 GS VGS = 0 V, f = 1 MHz Top 15 V C = C + C , C Shorted iss gs gd ds 101 10 V 2000 C = C rss gd 8.0 V C = C + C oss ds gd 7.0 V 6.0 V C 5.5 V 1500 iss 4.5 V 5.0 V Bottom 4.5 V ain Current (A) 1000 , Dr Capacitance (pF) I D Coss 500 100 20 µs Pulse Width Crss T = 150 °C C 0 100 101 100 101 91069_02 VDS, Drain-to-Source Voltage (V) 91069_05 VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20 I = 8.0 A D 150 °C 101 16 V = 400 V DS ltage (V) V = 250 V o DS V 25 °C V = 100 V 12 DS ain Current (A) 8 100 , Dr I D , Gate-to-Source 4 20 µs Pulse Width GS For test circuit V = 50 V V DS see figure 13 0 4 5 6 7 8 9 10 0 15 30 45 60 75 91069_03 VGS, Gate-to-Source Voltage (V) 91069_06 QG, Total Gate Charge (nC)
Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
S21-0901-Rev. D, 30-Aug-2021
3
Document Number: 91069 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
