Datasheet NDS351AN (ON Semiconductor) - 2
| Manufacturer | ON Semiconductor |
| Description | N-Channel, Logic Level, PowerTrench MOSFET |
| Pages / Page | 6 / 2 — NDS351AN. NDS351AN N-Channel, Logic Level, PowerTrench MOSFET. General … |
| File Format / Size | PDF / 450 Kb |
| Document Language | English |
NDS351AN. NDS351AN N-Channel, Logic Level, PowerTrench MOSFET. General Description. Features. SuperSOT -3
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NDS351AN NDS351AN N-Channel, Logic Level, PowerTrench MOSFET General Description Features
These N-Channel Logic Level MOSFETs are produced • 1.4 A, 30 V. RDS(ON) = 160 mΩ @ VGS = 10 V using ON Semiconductor’s advanced PowerTrench process that has been especially tailored RDS(ON) = 250 mΩ @ VGS = 4.5 V to minimize the on-state resistance and yet maintain superior switching performance. • Ultra-Low gate charge These devices are particularly suited for low voltage applications in notebook computers, portable phones, • Industry standard outline SOT-23 surface mount PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are package using proprietary SuperSOTTM-3 design for needed in a very small outline surface mount package. superior thermal and electrical capabilities • High performance trench technology for extremely low RDS(ON)
D
D
S
G S
G SuperSOT -3 TM Absolute Maximum Ratings
TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ± 20 V ID Drain Current – Continuous (Note 1a) 1.4 A – Pulsed 10 P Power Dissipation for Single Operation (Note 1a) 0.5 D W (Note 1b) 0.46 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75
Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity
351A NDS351AN 7’’ 8mm 3000 units © 2003 Semiconductor Components Industries, LLC. Publication Order Number: September-2017, Rev. 5 NDS351AN/D
These N-Channel Logic Level MOSFETs are produced • 1.4 A, 30 V. RDS(ON) = 160 mΩ @ VGS = 10 V using ON Semiconductor’s advanced PowerTrench process that has been especially tailored RDS(ON) = 250 mΩ @ VGS = 4.5 V to minimize the on-state resistance and yet maintain superior switching performance. • Ultra-Low gate charge These devices are particularly suited for low voltage applications in notebook computers, portable phones, • Industry standard outline SOT-23 surface mount PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are package using proprietary SuperSOTTM-3 design for needed in a very small outline surface mount package. superior thermal and electrical capabilities • High performance trench technology for extremely low RDS(ON)
D
D
S
G S
G SuperSOT -3 TM Absolute Maximum Ratings
TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ± 20 V ID Drain Current – Continuous (Note 1a) 1.4 A – Pulsed 10 P Power Dissipation for Single Operation (Note 1a) 0.5 D W (Note 1b) 0.46 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75
Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity
351A NDS351AN 7’’ 8mm 3000 units © 2003 Semiconductor Components Industries, LLC. Publication Order Number: September-2017, Rev. 5 NDS351AN/D
