New ProductTN0200K Vishay Siliconix N-Channel 20-V (D-S) MOSFETsFEATURESPRODUCT SUMMARYV • TrenchFET® Power MOSFET DS (V)rDS(on) ( Ω )ID (A) • ESD Protected: 4000 V 0.4 at VGS = 4.5 V 0.73 RoHS 20 COMPLIANT 0.5 at V APPLICATIONS GS = 2.5 V 0.65 • Direct Logic-Level Interface: TTL/CMOS • Drivers: Relays, Solenoids, Lamps, Hammers • Battery Operated Systems, DC/DC Converters • Solid-State Relays • Load/Power Switching-Cell Phones, Pagers TO-236 D (SOT-23) G 1 Marking Code: K2ywl 100 Ω G 3 D K2 = Part Number Code for TN0200K y = Year Code S 2 w = Week Code l = Lot Traceability Top View Ordering Information: TN0200K-T1-E3 (Lead (Pb)-free) S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted ParameterSymbol LimitUnit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 8 TA = 25 °C 0.73 Continuous Drain Current (T I J = 150 °C)b D TA = 70 °C 0.58 A Pulsed Drain Currenta IDM 4 Continuous Source Current (Diode Conduction)b IS 0.3 TA = 25 °C 0.35 Power Dissipationb PD W TA = 70 °C 0.22 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGSParameterSymbol LimitUnit Maximum Junction-to-Ambientb RthJA 357 °C/W Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t ≤ 10 sec. Document Number: 72678 www.vishay.com S-71198–Rev. B, 18-Jun-07 1 Document Outline Datasheet Disclaimer