Datasheet 2N2322, 2N2323, 2N2324, 2N2325, 2N2326 (New Jersey Semiconductor)

, Una.
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U.S.A. 2N?322 thru 2N2326 (SILICON) All-diffused PNPN thyristors designed for gating
operation in mA/juA signal or detection circuits. (TO-5) MAXIMUM RAT!NtsS*(TJ"1 125'c unl«sotherwise noted, Rs> -1000 ohms) Symbol Rating
Peak Reverse Blocking Voltage
(Note 1) 2N2322
2N2323
2N2324
2N2325
2N2326 Non-Repetitive Peak Reverse Blocking Voltage
(t < 5 , 0 m s )
2N2322
-2N2323
2N2324
2N2325
2N2326
Forward Current RMS
(All Conduction Angles)
Peak Surge Current
(One -Half Cycle, 60 Hz)
No Repetition Until Thermal
Equilibrium is Restored
Peak Gate Power — Forward
Average Gate Power — Forward
Peak Gate Current — Forward
Peak Gate Voltage — Forward
Reverse
Operating Junction Temperature Range
Storage Temperature Range
Lead Solder Temperature
(> 1/16" from case, 10 sec. max) v RSM(rep) v RSM(non-rep) Value Unit
Volts 25
50
100
150
200
Volts 40
75
150
225
300 'T(RMS) 1.6 Amp ITSM 15 Amp 0.1 Watt 0.01 Watt 0.1 Amp 6.0 Volts PGM
P G(AV) IGM
V GFM
V GRM T J, V
-6.0
-65 to +125 °C -65 to +150 "C +230 °C NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
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