Datasheet SSM10N961L (Toshiba) - 3
Manufacturer | Toshiba |
Description | Silicon N-Channel MOSFET |
Pages / Page | 9 / 3 — SSM10N961L. 6. Electrical. Characteristics. 6.1. Static. Characteristics. … |
File Format / Size | PDF / 484 Kb |
Document Language | English |
SSM10N961L. 6. Electrical. Characteristics. 6.1. Static. Characteristics. (Unless. otherwise. specified,. Ta. =. 25. �). Characteristics. Symbol. Test
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SSM10N961L 6. Electrical Characteristics 6.1. Static Characteristics (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Test Condition Min Typ. Max Unit Gate-source leakage current IGSS VSS = 0 V, VGS = ±20 V � � ±10 µA Source-source current (zero-gate voltage) ISSS VSS = 30 V, VGS = 0 V � � 1 µA Source-source breakdown voltage V(BR)SSS IS = 250 µA, VGS = 0 V 30 � � V Gate threshold voltage (Note 1) Vth VSS = 10 V, IS = 0.25 mA 1.3 1.8 2.3 V Source–source on-resistance (Note 2) RSS(ON) IS = 7 A, VGS = 10 V 8.0 9.9 12.8 mΩ IS = 7 A, VGS = 4.5 V 11.8 13.6 17.6 Body diode forward voltage (Note 2) VF(S-S) IF = 7 A, VGS = 0 V � 0.8 1.2 V Note 1: Let Vth be the voltage applied between gate and source that causes the source current (IS) to below (0.25 mA for this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON). Take this into consideration when using the device. Note 2: Pulse measurement. 6.2. Dynamic Characteristics (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Test Condition Min Typ. Max Unit Switching time (turn-on delay time) td(on) VDD = 15 V, IS = 7 A, � 87 � ns Switching time (rise time) t VGS = 0 to 10 V, r � 159 � RG = 50 Ω, RL = 0.6 Ω Switching time (turn-off delay time) td(off) Duty ≤ 1 %, VIN: tr, tf < 5 ns � 816 � Switching time (fall time) tf Common source, See Chapter 6.3 � 494 � 6.3. Switching Time Test Circuit Fig. 6.3.1 Switching Time Test Circuit Fig. 6.3.2 Input Waveform/Output Waveform 6.4. Gate Charge Characteristics (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Test Condition Min Typ. Max Unit Total gate charge (gate-source plus gate-drain) Qg(4.5V) VSS = 15 V, IS = 7 A, VGS = 4.5 V � 8.8 � nC Qg(10V) VSS = 15 V, IS = 7 A, VGS = 10 V � 17.3 � Gate-source charge 1 Qgs1 VSS = 15 V, IS = 7 A � 3.0 � Gate-drain charge Qgd � 3.6 � ©2023 3 2023-06-26 Toshiba Electronic Devices & Storage Corporation Rev.1.0