Datasheet MAC223FP, MAC223AFP (Motorola) - 2
| Manufacturer | Motorola |
| Description | Silicon Bidirectional Triode Thyristors |
| Pages / Page | 4 / 2 — ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. … |
| File Format / Size | PDF / 106 Kb |
| Document Language | English |
ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. Figure 1. RMS Current Derating
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ELECTRICAL CHARACTERISTICS
(TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Peak Blocking Current(1) TJ = 25°C IDRM — — 10 µA (VD = Rated VDRM, Gate Open) TJ = 125°C — — 2 mA Peak On-State Voltage VTM — 1.4 1.85 Volts (ITM = 35 A Peak, Pulse Width p 2 ms, Duty Cycle p 2%) Gate Trigger Current (Continuous dc) IGT mA (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) — 20 50 MT2(–), G(+) “A” SUFFIX ONLY — 30 75 Gate Trigger Voltage (Continuous dc) VGT Volts (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(–), G(–); MT(+), G(–) — 1.1 2 MT2(–), G(+) “A” SUFFIX ONLY — 1.3 2.5 (VD = Rated VDRM, TJ = 125°C, RL = 10 k) 0.2 0.4 — MT(+), G(+); MT2(–), G(–); MT2(+), G(–) MT2(–), G(+) “A” SUFFIX ONLY 0.2 0.4 — Holding Current IH — 10 50 mA (VD = 12 V, ITM = 200 mA, Gate Open) Gate Controlled Turn-On Time tgt — 1.5 — µs (VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA) Critical Rate of Rise of Off-State Voltage dv/dt — 40 — V/µs (VD = Rated VDRM, Exponential Waveform, TC = 125°C) Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5 — V/µs (VD = Rated VDRM, ITM = 35 A Peak, Commutating di/dt = 12.6 A/ms, Gate Unenergized, TC = 80°C) 1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage applied exceeds the rated blocking voltage. ° 125 40 TTS) A TURE ( C) 115 TION (W A 30 TEMPERA 105 95 20 ABLE CASE 85 ALLOW 10 VERAGE POWER DISSIP 75 A V) , D(A 0 , MAXIMUM P T C 0 5 10 15 20 25 0 5 10 15 20 25 IT(RMS), RMS ON-STATE CURRENT (AMPS) IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation
2 Motorola Thyristor Device Data
(TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Peak Blocking Current(1) TJ = 25°C IDRM — — 10 µA (VD = Rated VDRM, Gate Open) TJ = 125°C — — 2 mA Peak On-State Voltage VTM — 1.4 1.85 Volts (ITM = 35 A Peak, Pulse Width p 2 ms, Duty Cycle p 2%) Gate Trigger Current (Continuous dc) IGT mA (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) — 20 50 MT2(–), G(+) “A” SUFFIX ONLY — 30 75 Gate Trigger Voltage (Continuous dc) VGT Volts (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(–), G(–); MT(+), G(–) — 1.1 2 MT2(–), G(+) “A” SUFFIX ONLY — 1.3 2.5 (VD = Rated VDRM, TJ = 125°C, RL = 10 k) 0.2 0.4 — MT(+), G(+); MT2(–), G(–); MT2(+), G(–) MT2(–), G(+) “A” SUFFIX ONLY 0.2 0.4 — Holding Current IH — 10 50 mA (VD = 12 V, ITM = 200 mA, Gate Open) Gate Controlled Turn-On Time tgt — 1.5 — µs (VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA) Critical Rate of Rise of Off-State Voltage dv/dt — 40 — V/µs (VD = Rated VDRM, Exponential Waveform, TC = 125°C) Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5 — V/µs (VD = Rated VDRM, ITM = 35 A Peak, Commutating di/dt = 12.6 A/ms, Gate Unenergized, TC = 80°C) 1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage applied exceeds the rated blocking voltage. ° 125 40 TTS) A TURE ( C) 115 TION (W A 30 TEMPERA 105 95 20 ABLE CASE 85 ALLOW 10 VERAGE POWER DISSIP 75 A V) , D(A 0 , MAXIMUM P T C 0 5 10 15 20 25 0 5 10 15 20 25 IT(RMS), RMS ON-STATE CURRENT (AMPS) IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation
2 Motorola Thyristor Device Data
