Datasheet MRF8P29300HR6, MRF8P29300HSR6 (NXP) - 6
| Manufacturer | NXP |
| Description | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| Pages / Page | 16 / 6 — TYPICAL CHARACTERISTICS. Figure 10. Pulsed Output Power versus. Input … |
| File Format / Size | PDF / 1.1 Mb |
| Document Language | English |
TYPICAL CHARACTERISTICS. Figure 10. Pulsed Output Power versus. Input Power. Figure 11. Pulsed Power Gain, Drain Efficiency
Model Line for this Datasheet
MRF8P29300H
MRF8P29300HS
Text Version of Document
TYPICAL CHARACTERISTICS
400 TC = - 30_C 25_C PULSED 300 85_C ATTS) (W 200 POWER T 100 UTPU ,O VDD = 30 Vdc, IDQ = 100 mA, f = 2900 MHz P out Pulse Width = 300 μsec, Duty Cycle = 10% 0 0 4 8 12 16 20 24 Pin, INPUT POWER (WATTS) PULSED
Figure 10. Pulsed Output Power versus Input Power
15 53 - 8 Gps 14.5 52 ) - 10 IRL (% (dB) B) (d 14 51 NCY SS - 12 LO ηD GAIN RN 13.5 50 EFFICIE - 14 IN RETU T ,POWER 13 V 49 DRA DD = 30 Vdc - 16 , PU G ps D IDQ = 100 mA η Pulse Width = 300 L,IN μsec 12.5 48 IR Duty Cycle = 10% - 18 12 47 - 20 2700 2750 2800 2850 2900 f, FREQUENCY (MHz)
Figure 11. Pulsed Power Gain, Drain Efficiency and Input Return Loss versus Frequency MRF8P29300HR6 MRF8P29300HSR6
RF Device Data 6 Freescale Semiconductor
400 TC = - 30_C 25_C PULSED 300 85_C ATTS) (W 200 POWER T 100 UTPU ,O VDD = 30 Vdc, IDQ = 100 mA, f = 2900 MHz P out Pulse Width = 300 μsec, Duty Cycle = 10% 0 0 4 8 12 16 20 24 Pin, INPUT POWER (WATTS) PULSED
Figure 10. Pulsed Output Power versus Input Power
15 53 - 8 Gps 14.5 52 ) - 10 IRL (% (dB) B) (d 14 51 NCY SS - 12 LO ηD GAIN RN 13.5 50 EFFICIE - 14 IN RETU T ,POWER 13 V 49 DRA DD = 30 Vdc - 16 , PU G ps D IDQ = 100 mA η Pulse Width = 300 L,IN μsec 12.5 48 IR Duty Cycle = 10% - 18 12 47 - 20 2700 2750 2800 2850 2900 f, FREQUENCY (MHz)
Figure 11. Pulsed Power Gain, Drain Efficiency and Input Return Loss versus Frequency MRF8P29300HR6 MRF8P29300HSR6
RF Device Data 6 Freescale Semiconductor
