Datasheet BDX42, BDX43, BDX44 (Philips) - 4
| Manufacturer | Philips |
| Description | NPN Darlington Transistors |
| Pages / Page | 8 / 4 — CHARACTERISTICS. SYMBOL. PARAMETER. CONDITIONS. MIN. TYP. MAX. UNIT. … |
| File Format / Size | PDF / 56 Kb |
| Document Language | English |
CHARACTERISTICS. SYMBOL. PARAMETER. CONDITIONS. MIN. TYP. MAX. UNIT. Switching times (between 10% and 90% levels);
Model Line for this Datasheet
Text Version of Document
Philips Semiconductors Product specification NPN Darlington transistors BDX42; BDX43; BDX44
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current BDX42 IE = 0; VCB = 60 V − − 100 nA BDX43 IE = 0; VCB = 80 V − − 100 nA BDX44 IE = 0; VCB = 100 V − − 100 nA ICES collector cut-off current BDX42 VBE = 0; VCE = 45 V − − 50 nA BDX43 VBE = 0; VCE = 60 V − − 50 nA BDX44 VBE = 0; VCE = 80 V − − 50 nA IEBO emitter cut-off current IC = 0; VEB = 4 V − − 50 nA hFE DC current gain VCE = 10 V; see Fig. 2 IC = 150 mA 1000 − − IC = 500 mA 2000 − − VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 0.5 mA − − 1.3 V IC = 500 mA; IB = 0.5 mA; Tj = 150 °C − − 1.3 V VCEsat collector-emitter saturation voltage BDX42; BDX44 IC = 1 A; IB = 4 mA − − 1.6 V IC = 1 A; IB = 4 mA; Tj = 150 °C − − 1.6 V VCEsat collector-emitter saturation voltage BDX43 IC = 1 A; IB = 1 mA − − 1.6 V IC = 1 A; IB = 1 mA; Tj = 150 °C − − 1.8 V VBEsat base-emitter saturation voltage IC = 500 mA; IB = 0.5 mA − − 1.9 V VBEsat base-emitter saturation voltage IC = 1 A; IB = 4 mA BDX42; BDX44 − − 2.2 V VBEsat base-emitter saturation voltage IC = 1 A; IB = 1 mA BDX43 − − 2.2 V fT transition frequency IC = 500 mA; VCE = 5 V; f = 100 MHz − 200 − MHz
Switching times (between 10% and 90% levels);
see Fig.3 ton turn-on time ICon = 500 mA; IBon = 0.5 mA; − − 500 ns I t Boff = −0.5 mA d delay time − − 200 ns tr rise time − − 300 ns toff turn-off time − − 1300 ns ts storage time − − 950 ns tf fall time − − 350 ns 1997 Jul 02 4 Document Outline FEATURES APPLICATIONS DESCRIPTION PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS CHARACTERISTICS PACKAGE OUTLINE SOT32 DEFINITIONS
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current BDX42 IE = 0; VCB = 60 V − − 100 nA BDX43 IE = 0; VCB = 80 V − − 100 nA BDX44 IE = 0; VCB = 100 V − − 100 nA ICES collector cut-off current BDX42 VBE = 0; VCE = 45 V − − 50 nA BDX43 VBE = 0; VCE = 60 V − − 50 nA BDX44 VBE = 0; VCE = 80 V − − 50 nA IEBO emitter cut-off current IC = 0; VEB = 4 V − − 50 nA hFE DC current gain VCE = 10 V; see Fig. 2 IC = 150 mA 1000 − − IC = 500 mA 2000 − − VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 0.5 mA − − 1.3 V IC = 500 mA; IB = 0.5 mA; Tj = 150 °C − − 1.3 V VCEsat collector-emitter saturation voltage BDX42; BDX44 IC = 1 A; IB = 4 mA − − 1.6 V IC = 1 A; IB = 4 mA; Tj = 150 °C − − 1.6 V VCEsat collector-emitter saturation voltage BDX43 IC = 1 A; IB = 1 mA − − 1.6 V IC = 1 A; IB = 1 mA; Tj = 150 °C − − 1.8 V VBEsat base-emitter saturation voltage IC = 500 mA; IB = 0.5 mA − − 1.9 V VBEsat base-emitter saturation voltage IC = 1 A; IB = 4 mA BDX42; BDX44 − − 2.2 V VBEsat base-emitter saturation voltage IC = 1 A; IB = 1 mA BDX43 − − 2.2 V fT transition frequency IC = 500 mA; VCE = 5 V; f = 100 MHz − 200 − MHz
Switching times (between 10% and 90% levels);
see Fig.3 ton turn-on time ICon = 500 mA; IBon = 0.5 mA; − − 500 ns I t Boff = −0.5 mA d delay time − − 200 ns tr rise time − − 300 ns toff turn-off time − − 1300 ns ts storage time − − 950 ns tf fall time − − 350 ns 1997 Jul 02 4 Document Outline FEATURES APPLICATIONS DESCRIPTION PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS CHARACTERISTICS PACKAGE OUTLINE SOT32 DEFINITIONS
