Datasheet FDS6675 (Fairchild) - 4
| Manufacturer | Fairchild |
| Description | Single P-Channel Logic Level PowerTrench MOSFET |
| Pages / Page | 9 / 4 — Typical Electrical Characteristics. Figure 1. On-Region Characteristics. … |
| File Format / Size | PDF / 356 Kb |
| Document Language | English |
Typical Electrical Characteristics. Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Model Line for this Datasheet
Text Version of Document
Typical Electrical Characteristics
50 2.5 V = -10V GS -6.0V 40 -4.5V 2 V = -3.5V GS -3.5V 30 -4.0V 1.5 -4.5 V -5.5V 20 -3.0V -7.0V DS(ON) 1 -10V R , NORMALIZED 10 D DRAIN-SOURCE ON-RESISTANCE - I , DRAIN-SOURCE CURRENT (A) 0.5 0 0 10 20 30 40 50 0 0.6 1.2 1.8 2.4 3 - I , DRAIN CURRENT (A) - V , DRAIN-SOURCE VOLTAGE (V) D DS
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with Dain Current and Gate Voltage
. 1.6 0.05 I D = -5.5A I = -11A D V GS = -10V 1.4 0.04 1.2 0.03 1 0.02 T = 125°C J DS(ON)R , NORMALIZED 0.8 0.01 DS(ON) 25° C R , ON-RESISTANCE (OHM) DRAIN-SOURCE ON-RESISTANCE 0.6 0 -50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 T , JUNCTION TEMPERATURE (° C) - V , GATE TO SOURCE VOLTAGE (V) J GS
Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with Temperature
.
Gate-to-Source Voltage.
50 50 V DS = -5.0V T = -55° C J V GS = 0V 25° C 10 40 125° C T = 125° C J 1 30 25° C 0.1 -55° C 20 D 0.01 - I , DRAIN CURRENT (A) 10 S - I , REVERSE DRAIN CURRENT (A) 0 0.001 1 2 3 4 5 0 0.4 0.8 1.2 - V , GATE TO SOURCE VOLTAGE (V) - V , BODY DIODE FORWARD VOLTAGE (V) GS SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
www.onsemi.com 3
50 2.5 V = -10V GS -6.0V 40 -4.5V 2 V = -3.5V GS -3.5V 30 -4.0V 1.5 -4.5 V -5.5V 20 -3.0V -7.0V DS(ON) 1 -10V R , NORMALIZED 10 D DRAIN-SOURCE ON-RESISTANCE - I , DRAIN-SOURCE CURRENT (A) 0.5 0 0 10 20 30 40 50 0 0.6 1.2 1.8 2.4 3 - I , DRAIN CURRENT (A) - V , DRAIN-SOURCE VOLTAGE (V) D DS
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with Dain Current and Gate Voltage
. 1.6 0.05 I D = -5.5A I = -11A D V GS = -10V 1.4 0.04 1.2 0.03 1 0.02 T = 125°C J DS(ON)R , NORMALIZED 0.8 0.01 DS(ON) 25° C R , ON-RESISTANCE (OHM) DRAIN-SOURCE ON-RESISTANCE 0.6 0 -50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 T , JUNCTION TEMPERATURE (° C) - V , GATE TO SOURCE VOLTAGE (V) J GS
Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with Temperature
.
Gate-to-Source Voltage.
50 50 V DS = -5.0V T = -55° C J V GS = 0V 25° C 10 40 125° C T = 125° C J 1 30 25° C 0.1 -55° C 20 D 0.01 - I , DRAIN CURRENT (A) 10 S - I , REVERSE DRAIN CURRENT (A) 0 0.001 1 2 3 4 5 0 0.4 0.8 1.2 - V , GATE TO SOURCE VOLTAGE (V) - V , BODY DIODE FORWARD VOLTAGE (V) GS SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
www.onsemi.com 3
