Datasheet IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 (Vishay)
| Manufacturer | Vishay |
| Description | Power MOSFET |
| Pages / Page | 13 / 1 — IRFR9310, IRFU9310, SiHFR9310, SiHFU9310. Power MOSFET. FEATURES. DPAK. … |
| File Format / Size | PDF / 266 Kb |
| Document Language | English |
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310. Power MOSFET. FEATURES. DPAK. IPAK. (TO-252). (TO-251). DESCRIPTION. PRODUCT SUMMARY
Model Line for this Datasheet
Text Version of Document
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
www.vishay.com Vishay Siliconix
Power MOSFET
S
FEATURES
• Advanced process technology
DPAK IPAK
• Fully avalanche rated
(TO-252) (TO-251)
• Surface-mount (IRFR9310, SiHFR9310) G D D • Straight lead (IRFU9310, SiHFU9310) • P-channel Available • Fast switching S G D S • Material categorization: for definitions of G D compliance please see www.vishay.com/doc?99912 P-Channel MOSFET
DESCRIPTION
Third generation power MOSFETs from Vishay utilize
PRODUCT SUMMARY
advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with VDS (V) -400 the fast switching speed and ruggedized device design that RDS(on) (Ω) VGS = -10 V 7.0 power MOSFETs are well known for, provides the designer Qg (Max.) (nC) 13 with an extremely efficient and reliable device for use in a Q wide variety of applications. gs (nC) 3.2 The DPAK is designed for surface mounting using vapor Qgd (nC) 5.0 phase, infrared, or wave soldering techniques. The straight Configuration Single lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications.
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and SiHFR9310-GE3 SiHFR9310TRL-GE3 SiHFR9310TR-GE3 SiHFR9310TRR-GE3 SiHFU9310-GE3 halogen-free - IRFR9310TRLPbF-BE3 - - - Lead (Pb)-free IRFR9310PbF IRFR9310TRLPbFa IRFR9310TRPbFa IRFR9310TRRPbFa IRFU9310PbF
Note
a. See device orientation
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS -400 V Gate-source voltage VGS ± 20 TC = 25 °C -1.8 Continuous drain current VGS at -10 V ID TC = 100 °C -1.1 A Pulsed drain current a IDM -7.2 Linear derating factor 0.40 W/°C Single pulse avalanche energy b EAS 92 mJ Repetitive avalanche current a IAR -1.8 A Repetitive avalanche energy a EAR 5.0 mJ Maximum power dissipation TC = 25 °C PD 50 W Peak diode recovery dV/dt c dV/dt -24 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) d For 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Starting TJ = 25 °C, L = 57 mH, Rg = 25 Ω, IAS = - 1.8 A (see fig. 12) c. ISD ≤ - 1.1 A, dI/dt ≤ 450 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case S21-0373-Rev. E, 19-Apr-2021
1
Document Number: 91284 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Power MOSFET
S
FEATURES
• Advanced process technology
DPAK IPAK
• Fully avalanche rated
(TO-252) (TO-251)
• Surface-mount (IRFR9310, SiHFR9310) G D D • Straight lead (IRFU9310, SiHFU9310) • P-channel Available • Fast switching S G D S • Material categorization: for definitions of G D compliance please see www.vishay.com/doc?99912 P-Channel MOSFET
DESCRIPTION
Third generation power MOSFETs from Vishay utilize
PRODUCT SUMMARY
advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with VDS (V) -400 the fast switching speed and ruggedized device design that RDS(on) (Ω) VGS = -10 V 7.0 power MOSFETs are well known for, provides the designer Qg (Max.) (nC) 13 with an extremely efficient and reliable device for use in a Q wide variety of applications. gs (nC) 3.2 The DPAK is designed for surface mounting using vapor Qgd (nC) 5.0 phase, infrared, or wave soldering techniques. The straight Configuration Single lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications.
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and SiHFR9310-GE3 SiHFR9310TRL-GE3 SiHFR9310TR-GE3 SiHFR9310TRR-GE3 SiHFU9310-GE3 halogen-free - IRFR9310TRLPbF-BE3 - - - Lead (Pb)-free IRFR9310PbF IRFR9310TRLPbFa IRFR9310TRPbFa IRFR9310TRRPbFa IRFU9310PbF
Note
a. See device orientation
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS -400 V Gate-source voltage VGS ± 20 TC = 25 °C -1.8 Continuous drain current VGS at -10 V ID TC = 100 °C -1.1 A Pulsed drain current a IDM -7.2 Linear derating factor 0.40 W/°C Single pulse avalanche energy b EAS 92 mJ Repetitive avalanche current a IAR -1.8 A Repetitive avalanche energy a EAR 5.0 mJ Maximum power dissipation TC = 25 °C PD 50 W Peak diode recovery dV/dt c dV/dt -24 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) d For 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Starting TJ = 25 °C, L = 57 mH, Rg = 25 Ω, IAS = - 1.8 A (see fig. 12) c. ISD ≤ - 1.1 A, dI/dt ≤ 450 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case S21-0373-Rev. E, 19-Apr-2021
1
Document Number: 91284 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
