Datasheet STB19NF20, STD19NF20 STF19NF20, STP19NF20 (STMicroelectronics) - 3
| Manufacturer | STMicroelectronics |
| Description | N-channel 200 V, 0.11 Ω, 15 A, MESH OVERLAY Power MOSFETs in D2PAK, DPAK, TO‑220FP and TO-220 packages |
| Pages / Page | 30 / 3 — STB19NF20,STD19NF20,STF19NF20,STP19NF20. Electrical characteristics. … |
| File Format / Size | PDF / 825 Kb |
| Document Language | English |
STB19NF20,STD19NF20,STF19NF20,STP19NF20. Electrical characteristics. Table 4. Static. Symbol. Parameter. Test conditions. Min. Typ. Max
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STB19NF20,STD19NF20,STF19NF20,STP19NF20 Electrical characteristics 2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 200 V VGS = 0 V, VDS = 200 V 1 IDSS Zero gate voltage drain current µA VGS = 0 V, VDS = 200 V, 10 TC = 125 °C(1) IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 7.5 A 0.11 0.16 Ω 1. Defined by design, not subject to production test.
Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance - 800 - Coss Output capacitance VDS = 25 V, f = 1 MHz, VGS = 0 V - 165 - pF Crss Reverse transfer capacitance - 26 - Qg Total gate charge VDD = 160 V, ID = 15 A, - 24 - Q V gs Gate-source charge GS = 0 to 10 V - 4.4 - nC (see Figure 16. Test circuit for gate Qgd Gate-drain charge charge behavior) - 11.6 -
Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VDD = 100 V, ID = 7.5 A, - 11.5 - t R r Rise time G = 4.7 Ω, VGS = 10 V - 22 - (see Figure 15. Test circuit for ns td(off) Turn-off delay time - 19 - resistive load switching times and Figure 20. Switching time tf Fall time - 11 - waveform)
Table 7. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current - 15 A I (1) SDM Source-drain current (pulsed) - 60 A V (2) SD Forward on voltage ISD = 15 A, VGS = 0 V - 1.6 V
DS4935
-
Rev 7 page 3/30
Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuits 4 Ordering information 5 Package information 5.1 D²PAK (TO-263) type A package information 5.2 D²PAK (TO-263) type B package information 5.3 DPAK (TO-252) type A2 package information 5.4 DPAK (TO-252) type C2 package information 5.5 D²PAK and DPAK packing information 5.6 TO-220FP package information 5.7 TO-220 type A package information Revision history
STB19NF20,STD19NF20,STF19NF20,STP19NF20 Electrical characteristics 2 Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 200 V VGS = 0 V, VDS = 200 V 1 IDSS Zero gate voltage drain current µA VGS = 0 V, VDS = 200 V, 10 TC = 125 °C(1) IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 7.5 A 0.11 0.16 Ω 1. Defined by design, not subject to production test.
Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance - 800 - Coss Output capacitance VDS = 25 V, f = 1 MHz, VGS = 0 V - 165 - pF Crss Reverse transfer capacitance - 26 - Qg Total gate charge VDD = 160 V, ID = 15 A, - 24 - Q V gs Gate-source charge GS = 0 to 10 V - 4.4 - nC (see Figure 16. Test circuit for gate Qgd Gate-drain charge charge behavior) - 11.6 -
Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time VDD = 100 V, ID = 7.5 A, - 11.5 - t R r Rise time G = 4.7 Ω, VGS = 10 V - 22 - (see Figure 15. Test circuit for ns td(off) Turn-off delay time - 19 - resistive load switching times and Figure 20. Switching time tf Fall time - 11 - waveform)
Table 7. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current - 15 A I (1) SDM Source-drain current (pulsed) - 60 A V (2) SD Forward on voltage ISD = 15 A, VGS = 0 V - 1.6 V
DS4935
-
Rev 7 page 3/30
Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuits 4 Ordering information 5 Package information 5.1 D²PAK (TO-263) type A package information 5.2 D²PAK (TO-263) type B package information 5.3 DPAK (TO-252) type A2 package information 5.4 DPAK (TO-252) type C2 package information 5.5 D²PAK and DPAK packing information 5.6 TO-220FP package information 5.7 TO-220 type A package information Revision history
