Datasheet 2N6545 (Inchange Semiconductor) - 2

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6545 ELECTRICAL CHARACTERISTICS TC=25
℃
unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCEO(SUS) Col ector-Emitter Sustaining Voltage IC= 50mA; IB= 0 400 V VCE(sat)-1 Col ector-Emitter Saturation Voltage IC= 5A; IB= 1.0A 1.5 V VCE(sat)-2 Col ector-Emitter Saturation Voltage IC= 8A; IB= 2.0A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.0A 1.6 V IEBO Emitter Cutoff Current VEB= 9V; IC= 0 1.0 mA ICBO Col ector Cutoff Current VCB= 850V;IE= 0 0.5 mA hFE-1 DC Current Gain IC= 2.5A; VCE= 3V 12 60 hFE-2 DC Current Gain IC= 5A; VCE= 3V 7 35 fT Current Gain-Bandwidth Product IC= 0.3A ; VCE= 10V; ftest=1.0MHz 6.0 MHz Switching times-Resistive Load td Delay Time 0.05 μs tr Rise Time IC= 5A , VCC= 250V, 1.0 μs IB1= -IB2= 1A, tp= 0.1ms t Duty Cycle≤2.0% s Storage Time 4.0 μs tf Fal Time 1.0 μs
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Document Outline isc Silicon NPN Power Transistor DESCRIPTION APPLICATIONS ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS