Datasheet TS7800 (Taiwan Semiconductor) - 6

TS7824 Electrical Characteristics
(Vin=33V, Iout=500mA, 0oC≤Tj≤125oC, Cin=0.33uF, Cout=0.1uF; unless otherwise specified.)
Parameter Symbol Test Conditions Min Typ Max Unit
Tj=25oC 23.07 24 24.96 Output Voltage Vout 27V≤Vin≤38V, 10mA≤Iout≤1A, 22.85 24 25.20 V PD ≤15W 27V≤Vin≤38V -- 18 480 Line Regulation REGline Tj=25oC 28V≤Vin≤32V -- 6 240 mV 10mA≤Iout≤1A -- 12 480 Load Regulation REGload Tj=25oC 250mA≤Iout≤750mA -- 4 240 Quiescent Current Iq Iout=0, Tj=25oC -- 4.6 8 27V≤Vin≤38V -- -- 1 mA Quiescent Current Change ∆Iq 10mA≤Iout≤1A -- -- 0.5 Output Noise Voltage Vn 10Hz≤f≤100KHz, Tj=25oC -- 170 -- uV Ripple Rejection Ratio RR f=120Hz, 27V≤Vin≤37V 54 70 -- dB Voltage Drop Vdrop Iout=1.0A, Tj=25oC -- 2 -- V Output Resistance Rout f=1KHz -- 28 -- mΩ Output Short Circuit Current Ios Tj=25oC -- 150 -- mA Peak Output Current Io peak Tj=25oC -- 2.2 -- A Temperature Coefficient of mV/ ∆Vout/ ∆Tj Iout=10mA, 0oC≤Tj≤125oC -- -1.5 -- Output Voltage oC z Pulse testing techniques are used to maintain the junction temperature as close to the ambient temperature as possible, and thermal effects must be taken into account separately. z This specification applies only for DC power dissipation permitted by absolute maximum ratings. TS7800 series 6-9 2003/12 rev. A