Datasheet IRF2804, IRF2804S, IRF2804L (International Rectifier) - 3
| Manufacturer | International Rectifier |
| Description | HEXFET Power MOSFET |
| Pages / Page | 12 / 3 — Fig 1. Fig 2. Fig 3. Fig 4 |
| File Format / Size | PDF / 292 Kb |
| Document Language | English |
Fig 1. Fig 2. Fig 3. Fig 4
Model Line for this Datasheet
Text Version of Document
IRF2804/S/L 10000 VGS 10000 VGS V TOP 15V GS TOP 15V 10V 10V TOP 15V ) 8.0V 8.0V 10V A ) ( 7.0V 8.0V A 7.0V t ( 1000 6.0V 7.0V n t 6.0V e 5.5V n 5.5V 6.0V rr 5.0V er 5.0V 5.5V u r BOTTOM 4.5V 1000 u 5.0V C BOTTOM 4.5V C BOTTOM 4.5V e c e r c u 100 r o u S o - S o - t- ot n - i n 100 a i r a 10 r D , D 4.5V , 4.5V I D I D 20µs PULSE WIDTH 20µs PULSE WIDTH Tj = 25°C Tj = 175°C 1 10 0.1 1 10 100 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 300 ) S Α( 250 TJ = 25°C e t T c n J = 175°C n e a r t r 100 c u 200 u C d e n c o r c u s 150 T o n J = 175°C S a - T r o J = 25°C T t - d n 10 r i a 100 ar wr D o , F I D , s 50 f VDS = 10V G VDS = 10V 20µs PULSE WIDTH 20µs PULSE WIDTH 1 0 4.0 5.0 6.0 7.0 8.0 9.0 0 40 80 120 160 200 VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance vs. Drain Current www.irf.com 3
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 300 ) S Α( 250 TJ = 25°C e t T c n J = 175°C n e a r t r 100 c u 200 u C d e n c o r c u s 150 T o n J = 175°C S a - T r o J = 25°C T t - d n 10 r i a 100 ar wr D o , F I D , s 50 f VDS = 10V G VDS = 10V 20µs PULSE WIDTH 20µs PULSE WIDTH 1 0 4.0 5.0 6.0 7.0 8.0 9.0 0 40 80 120 160 200 VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance vs. Drain Current www.irf.com 3
