Datasheet BS107A (ON Semiconductor) - 3
| Manufacturer | ON Semiconductor |
| Description | Small Signal MOSFET 250 mA, 200 V, N−Channel TO-92 |
| Pages / Page | 5 / 3 — BS107A. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. … |
| File Format / Size | PDF / 119 Kb |
| Document Language | English |
BS107A. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
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BS107A ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Zero−Gate−Voltage Drain Current (VDS = 130 Vdc, VGS = 0) IDSS − − 30 nAdc Drain−Source Breakdown Voltage (VGS = 0, ID = 100 mAdc) V(BR)DSX 200 − − Vdc Gate Reverse Current (VGS = 15 Vdc, VDS = 0) IGSS − 0.01 10 nAdc
ON CHARACTERISTICS
(Note 3) Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) VGS(Th) 1.0 − 3.0 Vdc Static Drain−Source On Resistance rDS(on) W BS107 (VGS = 2.6 Vdc, ID = 20 mAdc) − − 28 (VGS = 10 Vdc, ID = 200 mAdc) − − 14 BS107A (VGS = 10 Vdc) (ID = 100 mAdc) − 4.5 6.0 (ID = 250 mAdc) − 4.8 6.4
SMALL− SIGNAL CHARACTERISTICS
Input Capacitance Ciss − 60 − pF (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance Crss − 6.0 − pF (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance Coss − 30 − pF (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Forward Transconductance gfs 200 400 − mmhos (VDS = 25 Vdc, ID = 250 mAdc)
SWITCHING CHARACTERISTICS
Turn−On Time ton − 6.0 15 ns Turn−Off Time toff − 12 15 ns 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
RESISTIVE SWITCHING
+25 V TO SAMPLING SCOPE 23 t 50 W INPUT on toff 20 dB V PULSE GENERATOR Vin out 50 W ATTENUAT 40 pF 90% 90% OR 50 10% 50 1 M OUTPUT Vout INVERTED 90% 10 V 50% 50% PULSE WIDTH INPUT Vin 10%
Figure 1. Switching Test Circuit Figure 2. Switching Waveforms http://onsemi.com 2
BS107A ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Zero−Gate−Voltage Drain Current (VDS = 130 Vdc, VGS = 0) IDSS − − 30 nAdc Drain−Source Breakdown Voltage (VGS = 0, ID = 100 mAdc) V(BR)DSX 200 − − Vdc Gate Reverse Current (VGS = 15 Vdc, VDS = 0) IGSS − 0.01 10 nAdc
ON CHARACTERISTICS
(Note 3) Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) VGS(Th) 1.0 − 3.0 Vdc Static Drain−Source On Resistance rDS(on) W BS107 (VGS = 2.6 Vdc, ID = 20 mAdc) − − 28 (VGS = 10 Vdc, ID = 200 mAdc) − − 14 BS107A (VGS = 10 Vdc) (ID = 100 mAdc) − 4.5 6.0 (ID = 250 mAdc) − 4.8 6.4
SMALL− SIGNAL CHARACTERISTICS
Input Capacitance Ciss − 60 − pF (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance Crss − 6.0 − pF (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance Coss − 30 − pF (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Forward Transconductance gfs 200 400 − mmhos (VDS = 25 Vdc, ID = 250 mAdc)
SWITCHING CHARACTERISTICS
Turn−On Time ton − 6.0 15 ns Turn−Off Time toff − 12 15 ns 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
RESISTIVE SWITCHING
+25 V TO SAMPLING SCOPE 23 t 50 W INPUT on toff 20 dB V PULSE GENERATOR Vin out 50 W ATTENUAT 40 pF 90% 90% OR 50 10% 50 1 M OUTPUT Vout INVERTED 90% 10 V 50% 50% PULSE WIDTH INPUT Vin 10%
Figure 1. Switching Test Circuit Figure 2. Switching Waveforms http://onsemi.com 2
