Datasheet 2SD1759, 2SD1861 (Rohm)

2SD1759 / 2SD1861 Tr ansistors Power transistor (40V, 2A)
2SD1759 / 2SD1861
z
Features
z
External dimensions
(Unit : mm) 1) Darlington connection for high DC current gain. 2SD1759 2) Built-in 4kΩ resistor between base and emitter. 5.5 1.5 3) Complements the 2SB1183 / 2SB1239. 0.75 ) 0.9 ( 1 ) 2.3 ( 2 5.1 6.5 ) 0.9 ( 3 2.3 z 0.65 C0.5
Equivalent circuit
0.8Min. 1.5 C 1.0 0.5 2.3 0.5 2.5 9.5 B ROHM : CPT3 (1) Base EIAJ : SC-63 (2) Collector R (3) Emitter BE 4kΩ C : Collector B : Base E : Emitter E 2SD1861 6.8 2.5 z
Absolute maximum ratings
(Ta=25°C) 0.9 4.4 Parameter Symbol Limits Unit 0.65Max. 1.0 Collector-base voltage VCBO 40 V Collector-emitter voltage V 14.5 CER 40 V(RBE=10kΩ) 0.5 Emitter-base voltage VEBO 5 V (1) (2) (3) Collector current IC 2 A(DC) 2SD1861 1 ∗ 2.54 2.54 1.05 0.45 Collector power W PC 1 dissipation 2SD1759 10 W(TC=25°C) Taping specifications Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ROHM : ATV (1) Emitter ∗ Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. (2) Collector (3) Base z
Packaging specifications and h FE
Type 2SD1759 2SD1861 Package CPT3 ATV hFE 1k to 200k 1k to Code TL TV2 Basic ordering unit (pieces) 2500 2500 z
Electrical characteristics
(Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 40 − − V IC=50µA Collector-emitter breakdown voltage BVCER 40 − − V IC=1mA , RBE=10kΩ Emitter-base breakdown voltage BVEBO 5 − − V IE=50µA Collector cutoff current ICBO − − 1 µA VCB=24V Emitter cutoff current IEBO − − 1 µA VEB=4V Collector-emitter saturation voltage VCE(sat) − 0.8 1.5 V IC/IB=0.6A/1.2mA 2SD1759 1000 DC current − 20000 − hFE VCE/IC=3V/0.5A transfer ratio 2SD1861 1000 − − − Transition frequency fT − 150 − MHz VCE=6V , IE= −0.1A , f=100MHz Output capacitance Cob − 11 − pF VCB=10V , IE=0A , f=1MHz Rev.A 1/2 Document Outline Power transistor (40V, 2A) 2SD1759 / 2SD1861