Datasheet BC638 (ON Semiconductor)
| Manufacturer | ON Semiconductor |
| Description | PNP Epitaxial Silicon Transistor |
| Pages / Page | 5 / 1 — DATA SHEET. www.onsemi.com. TO−92−3. CASE 135AR. Features. ABSOLUTE … |
| File Format / Size | PDF / 124 Kb |
| Document Language | English |
DATA SHEET. www.onsemi.com. TO−92−3. CASE 135AR. Features. ABSOLUTE MAXIMUM RATINGS. MARKING DIAGRAM. Parameter. Symbol. Value. Unit
Model Line for this Datasheet
Text Version of Document
link to page 1 link to page 2
DATA SHEET www.onsemi.com
PNP Epitaxial Silicon Transistor BC638
TO−92−3 CASE 135AR
Bent Lead 1
Features
2 • 3 Switching and Amplifier Applications • 1. Emitter Complement to BC637 • 2. Collector These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 3. Base Compliant
ABSOLUTE MAXIMUM RATINGS MARKING DIAGRAM
(Values are at TA = 25°C unless otherwise noted)
Parameter Symbol Value Unit
ABC Collector−Emitter Voltage at V 638 CER −60 V RBE = 1 kW YWW Collector−Emitter Voltage VCES −60 V Collector−Emitter Voltage VCEO −60 V Emitter−Base Voltage VEBO −5 V A = Assembly Code Collector Current IC −1 A BC638 = Device Code YWW = Date Code Peak Collector Current ICP −1.5 A Base Current IB −100 mA Junction Temperature TJ 150 °C
ORDERING INFORMATION
Storage Temperature T See detailed ordering and shipping information on page 2 of STG −65 to 150 °C this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
(Note 1) (Values are at TA = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Power Dissipation PD 1 W Dissipation Derate Above 25°C PD 8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W 1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. © Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
November, 2021 − Rev. 3 BC638/D
DATA SHEET www.onsemi.com
PNP Epitaxial Silicon Transistor BC638
TO−92−3 CASE 135AR
Bent Lead 1
Features
2 • 3 Switching and Amplifier Applications • 1. Emitter Complement to BC637 • 2. Collector These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS 3. Base Compliant
ABSOLUTE MAXIMUM RATINGS MARKING DIAGRAM
(Values are at TA = 25°C unless otherwise noted)
Parameter Symbol Value Unit
ABC Collector−Emitter Voltage at V 638 CER −60 V RBE = 1 kW YWW Collector−Emitter Voltage VCES −60 V Collector−Emitter Voltage VCEO −60 V Emitter−Base Voltage VEBO −5 V A = Assembly Code Collector Current IC −1 A BC638 = Device Code YWW = Date Code Peak Collector Current ICP −1.5 A Base Current IB −100 mA Junction Temperature TJ 150 °C
ORDERING INFORMATION
Storage Temperature T See detailed ordering and shipping information on page 2 of STG −65 to 150 °C this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
(Note 1) (Values are at TA = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Power Dissipation PD 1 W Dissipation Derate Above 25°C PD 8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 125 °C/W 1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. © Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
November, 2021 − Rev. 3 BC638/D
